[17p-PA5-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[17p-PA5-4] Electrical Transport Properties of InAs/InAsSb Ultrahigh-Density Quantum Dot Layers

〇Yoshihiro Naruko¹, Ryoga Kai¹, Toshiyuki Kaizu^2,1, Naoya Miyashita^1,2, Koichi Yamaguchi^1,2 (1.Dep. of Eng. Sci., Univ. of Electro-Communications, 2.QFCD2 center, Univ. of Electro-Communications)

Keywords:

semiconductor,quantum dot,electrical transport