Presentation Information
[17p-PA6-17]Study on Inorganic EL Device Driving Using IC-Integrated Boundary Conduction Mode
〇Hideto Mitsuhashi1, Tatsuya Kaku1, Tadashi Nishikawa1, Shuichi Sato1 (1.Tokyo Denki Univ.)
Keywords:
electroluminescence,flyback converter,boundary conduction mode (BCM)
Inorganic electroluminescent (EL) devices require high-voltage AC driving circuits exceeding 100V, presenting challenges for miniaturization and system integration. This study evaluates the fundamental characteristics of boundary conduction mode (BCM) control circuits using LT8304ES8E for driving ZnS:Cu,Cl-based inorganic EL devices. Two BCM circuit configurations—a boost converter and a flyback converter—were fabricated and compared with a conventional discrete-component circuit. While BCM circuits achieved significant board area reduction through IC integration and demonstrated automatic load-adaptive frequency control, the output voltage was insufficient (122.5V for boost, maximum 330V for flyback) compared to the conventional circuit (305V, 329 cd/m²). Emission spectra showed identical peak wavelengths (451nm) across all circuits, confirming that driving methods do not affect the luminescence mechanism. Thermal imaging revealed localized heating at feedback and ballast resistors, identifying thermal management as a critical challenge. These findings provide important guidelines for designing compact EL driving circuits and highlight key optimization requirements for microsystem integration.