Session Details
[17p-PA6-1~17]13.8 Optical properties and light-emitting devices
Tue. Mar 17, 2026 4:30 PM - 6:00 PM JST
Tue. Mar 17, 2026 7:30 AM - 9:00 AM UTC
Tue. Mar 17, 2026 7:30 AM - 9:00 AM UTC
PA6 (Arena (1F))
[17p-PA6-1]Luminescence Properties and Valence States of Cr in 45Sb2O3-10ZnO-45GeO2 Glasses
〇Yasushi Nanai1, Seiya Shimono2 (1.NDA, 2.JASRI)
[17p-PA6-2]Ab initio calculation of energy level structure for Ni2+ in five-fold coordination
〇Yuuki Kitagawa1, Shinozaki Kenji1 (1.AIST)
[17p-PA6-3]Wide band emission in Ca2GeO4:Ni2+ near-infrared phosphors
〇(M1)Yuki Imai1, Tasuku Doi1, Kaito Nagaretani1, Masatoshi Ishida2, Koutoku Ohmi1 (1.Tottori Univ., 2.Tokyo Metropolitan)
[17p-PA6-4]Photoluminescence Properties of ZnS:Mn Thin Film Phosphors Fabricated by CVD
〇Toshiki Okamura1, Gen Fujituka1, Shinichi Yamamoto1 (1.Ryukoku Univ.)
[17p-PA6-5]The Effect of Gallium Deficiency on Persistent Luminescence in Sr2Zn2Ga2O7: Nd3+
〇Naoteru Nakao1, Hiroaki Samata1 (1.Kobe Univ.)
[17p-PA6-6]Luminescence characteristics in Calcium Silicon Nitride (Ca2Si5N8) phosphor
〇(M1)Eisuke Momino1, Tsuyoshi Okuno1, Takahiro Muranaka1, Yoriko Suda2 (1.UEC, 2.Tokyo Univ. of Tech)
[17p-PA6-7]Identification of UV wavelength using visible luminescence changes exhibited by metal oxide phosphors
〇(M1)Yutaro Kori1, Nozomi Minomura1, Ryo Ogasawara2, Fumito Fujishiro2, Yoichiro Kai3, Kazunobu Kojima3, Masatsugu Oishi1 (1.Tokushima Univ., 2.Kochi Univ., 3.Osaka Univ.)
[17p-PA6-8]Enhancement of luminescence properties of LaOF:Yb3+/Tm3+ via Zn2+ co-doping
〇Toshihiro Nonaka1, Daiki Suetsugu2, Shin-Ichi Yamamoto2 (1.Otemon Gakuin Univ., 2.Ryukoku Univ.)
[17p-PA6-9]Temperature dependence of upconversion luminescence in Gd2(MoO4)3: Yb3+, Ho3+, Nd3+
〇Ryota Ikenaka1, Kyosuke Kagawa1, Hiroaki Samata1 (1.Kobe Univ.)
[17p-PA6-10]Evaluation of Hyperfine Level Transitions in 167Er by SHB method
〇Zentaro Matsuzaki1, Taeko Hamazaki1, Hiroo Omi2, Shoichiro Yasui3,4, Satoru Adachi3, Tomohiro Inaba4, Xuejun Xu4, Takehiko Tawara1 (1.Nihon Univ., 2.Yamato Univ., 3.Hokkaido Univ., 4.NTT Basic Research Lab.)
[17p-PA6-11]Circularly polarized electroluminescence properties of spin-polarized light-emitting diodes with post-deposition annealing treatment
〇Itsu Tanaka1, Daiki Mineyama1, Hiroto Kise1, Ayano Morita1, Junichi Takayama1, Akihiro Murayama1, Satoshi Hiura1 (1.IST, Hokkaido Univ.)
[17p-PA6-12]Electroluminescence properties of a spin-polarized light-emitting diode with different MgO tunnel barrier thickness
〇Shinnosuke Wada1, Itsu Tanaka2, Daiki Mineyama2, Junichi Takayama2, Akihiro Murayama2, Satoshi Hiura2 (1.Hokkaido Univ., 2.IST,Hokkaido Univ.)
[17p-PA6-13]Enhancement in light-polarization detection characteristics in GaNAs-based photodiodes via utilization of valence-band splitting
〇Daiki Mineyama1, Itsu Tanaka1, Takeru Omi2, Kaito Nakama3, Hidetoshi Hashimoto3, Keisuke Minehisa3, Junichi Takayama1, Fumitaro Ishikawa3, Akihiro Murayama1, Satoshi Hiura1 (1.IST, Hokkaido Univ., 2.Hokkaido Univ., 3.RCIQE, Hokkaido Univ.)
[17p-PA6-14]Study on the application of Photoluminescence (PL) imaging technique
for failure analysis of communication laser diodes
〇Shinya Honda1, Tomoyuki Uchida1, Ryuichi Sugie1 (1.Toray Research Center Inc.)
[17p-PA6-15]Characterization of GaN Light-Emitting Diodes coated with AgInS2/ZnS
〇Gen Fujitsuka1, Daiki Suetsugu1, Sinichi Yamamoto1 (1.Ryukoku Univ.)
[17p-PA6-16]Exciton-biexciton dynamics in two-dimensional lead bromide perovskite
〇Chikako Akagi1, Masahiro Tokunaga1, Hideyuki Kunugita1, Kazuhiro Ema1 (1.Sophia Univ.)
[17p-PA6-17]Study on Inorganic EL Device Driving Using IC-Integrated Boundary Conduction Mode
〇Hideto Mitsuhashi1, Tatsuya Kaku1, Tadashi Nishikawa1, Shuichi Sato1 (1.Tokyo Denki Univ.)