[17p-S2_202-1~6] 2.1 Radiation physics, Material development and characteristic evaluation

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-S2_202-6] Evaluation of film thickness dependence of BGaN diodes for high-temperature neutron detectors

〇ryohei kudou¹, Eito Kokubo², Katsuyuki Takagi³, Tetsuichi Kishishita⁴, Yoshinori Sakurai⁵, Hiroshi Yashima⁵, Takahiro Makino⁶, Takeshi Ohshima⁶, Yoshio Honda⁷, Hiroshi Amano⁷, Yoku Inoue^1,8, Toru Aoki^1,3, Takayuki Nakano^1,3,8 (1.Shizuoka Univ., 2.Nagoya Univ., 3.R.I.E., 4.KEK, 5.KURNS., 6.QST, 7.IMaSS Nagoya Univ., 8.Shizuoka Univ. Eng.)

Keywords:

BGaN,neutron detector,semiconductor