[17p-W9_323-1~10] CS.7 Code-sharing Session of 6.5 & 7.5

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-W9_323-4] Electrical Resistance Characteristics of Nitrogen-Doped DLC: N₂ Concentration Dependence

〇(M1C)Yulin Yan¹, Satoshi Seki¹, Shuichi Ogawa¹ (1.Nihon Univ.)

Keywords:

Diamond-Like Carbon,Photoemission-Assisted Plasma CVD,Raman spectroscopy

We deposited nitrogen-doped DLC (N-DLC), a candidate top-gate dielectric for graphene FETs, by photoemission-controlled plasma CVD, and evaluated how the N₂ flow rate and the Ar/CH₄ ratio affect the two-terminal resistance and the Raman D- and G-band positions. The resistance decreased with increasing N₂ flow, and the decrease became more gradual at higher N₂ flow rates. With N₂ incorporation, both band positions shifted to lower wavenumbers. In this talk, we also report the correlation between film thickness and nitrogen concentration determined by XPS.