[17p-W9_323-1~10] CS.7 Code-sharing Session of 6.5 & 7.5

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-W9_323-7] Epitaxial growth of FeGeγ thin film on Si substrate by seed-assisted epitaxy

〇Tsukasa Terada¹, Takafumi Ishibe^1,2, Nobuyasu Naruse³, Yoshiaki Nakamura^1,2 (1.Eng. Sci. Univ. Osaka, 2.OTRI, 3.Shiga Univ. Med. Sci.)

Keywords:

Thermoelectric material,Epitaxial growth,Low-dimensional materials

FeGe_γ is known as a bulk material with high thermoelectric performance at room temperature, and its application to thermoelectric thin films is of particular interest. In this study, we report the development of a fabrication method for epitaxial FeGe_γ thin films.