[17p-W9_324-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-15] Resistance Dependence of Photocurrent Relaxation and Synapse Application in Pt/Nb:SrTiO₃ Junction

〇(M2)Ryosuke Murai¹, Yumeng Zheng¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

Keywords:

ReRAM,Photoelectric Synapse,Phsical Reservoir Computing

The Pt/Nb:SrTiO₃ junction is a promising candidate for multimodal AI devices because its resistance can be modulated by both electrical and optical stimuli; however, the detailed correlation between these two properties remains unclear. In this study, we investigated the optical response characteristics under electrically controlled resistance states to elucidate the complementary operating mechanisms of the two functionalities. Furthermore, we evaluated its performance as a physical reservoir for optical inputs.