The 73rd JSAP Spring Meeting 2026
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17p-W9_324-1~16]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 17, 2026 1:30 PM - 5:45 PM JST
Tue. Mar 17, 2026 4:30 AM - 8:45 AM UTC
W9_324 (West Bldg. 9)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-1]Reduction of Si impurities in β-Ga2O3 thin films grown by mist CVD

〇Yuki Isobe1, Yuki Yamamoto2, Takeru Wakamatsu1, Kentaro Kaneko3, Shizuo Fujita1, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Oxide Corp., 3.Ritsumeikan Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-2]Homoepitaxial growth of twin-free (100)-oriented β-Ga2O3 films using vicinal substrates

〇(D)Kazuki koreishi1, Kohei Yoshimatsu1, Akira Ohtomo1 (1.Institute of Science Tokyo)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-3]High-purity β-Ga2O3 growth in an industrial-scale MOVPE reactor via elucidation of trimethylgallium decomposition and hydrocarbon combustion mechanisms

〇Yuma Terauchi1, Shogo Sasaki2, Junya Yoshinaga1,3, Yoshihiko Takinami4, Masato Ishikawa5, Yoshinao Kumagai1 (1.Tokyo Univ. of Agric. and Tech., 2.Nara Women's Univ., 3.TAIYO NIPPON SANSO CORPORATION, 4.Kanomax Analytical Inc., 5.Gas-Phase Growth Ltd.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-4]Epitaxial growth of Si-doped β-(InxGa1-x)2O3 thin films by mist CVD

〇(M1)Aoi Saito1, Hiroki Miyake1,2, Hiroyuki Nishinaka1 (1.Kyoto Inst. of Tech., 2.MIRISE)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-5]Structural Characterization of Nitrogen-Doped (AlxGa1-x)2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

〇(M1)Kohki Tsujimoto1, Tomoki Uehara1, Jin Inajima1, Yusuke Teramura1, Toshiki Nakaoka1, Shoma Takeda1, Satoko Honda1, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-6]Introduction of acceptors and ALD growth of β-Ga2O3 films using rf Nitrogen Plasma

〇Shodai Ata1, Katsuhiro Furukawa1, Hisashi Soma1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-7]Growth of 150 mm β-Ga2O3 (001) single-crystal by EFG method

〇SHO HASEGAWA1, Kimiyoshi Koshi1, Yuki Ueda1, Kohei Sasaki1, Ryoichi Sakaguchi1, Isao Sakamoto1, Keita Konishi1, Makoto Mizui1, Yu Yamaoka1, Shinya Watanabe1, Akito Kuramata1 (1.NCT Inc.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-8]Study of 2DEG density modulation in GaN HEMT using κ-Ga2O3 thin films

〇(M1)Misaki Nishikawa1, Hikaru Doi1, Masatoshi Koyama1, Akihiko Fujii1, Toshihiko Maemoto1, Kozo Makiyama2, Ken Nakata2 (1.NMRC, Osaka Inst. of Tech., 2.Sumitomo Electric Industries, Ltd.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-9]Work Function Dependence of Schottky Barrier Height on HVPE-grown β-Ga2O3

〇Eito Hatayama1, Kazutaka Kanegae1, Hiroyuki Nishinaka1 (1.Kyoto Inst.Tech)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-10]DLOS Evaluation on the Effect of High-Temperature Annealing on Trap Levels in Ga2O3 Thin Films

〇(M2)Jun Morihara1, Tsukasa Kakio1, Romualdo A. Ferreyra1, Junya Yoshinaga2,3, Takafumi Kamimura4, Yoshinao Kumagai2, Masataka Higashiwaki1,4 (1.Osaka Metropolitan Univ., 2.Tokyo Univ. of Agric. and Tech., 3.TAIYO NIPPON SANSO CORPORATION, 4.NICT)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-11]Observation of Light Propagation in α-Ga2O3 Optical Waveguides Fabricated
by Selective Area Growth

〇Keidai Toyoshima1, Riena Jinno1, Ryosuke Kizu3, Satoshi Iwamoto1,2 (1.RCAST, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.AIST)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-12]High-Temperature Growth of Rocksalt MgZnO on Sapphire Substrates Using an MgO Buffer Layer and Its Optical Properties

〇Kosuke Kimura1, Kohei Shima2, Kouichi Matsuo3, Kouji Uchida3, Atsushi Oono3, Goushun Chou3, Isao Takahashi4,5, Shigefusa Chichibu2, Kentaro Kaneko4,5 (1.Col. of Sci. & Eng. Ritsumeikan Univ., 2.IMRAM-Tohoku Univ., 3.Iwasaki Electric Co., Ltd., 4.ROST, 5.RISA)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-13]Growth of Rutile GeO2 by Oxide Vapor Phase Epitaxy method

〇(M1)Haru Nakano1, Eisho Kishimoto1, Shigeyoshi Usami1, Masayuki Imanishi1, Yusuke Mori1 (1.UOsaka)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-14]Optical properties of (001) oriented r-GeO2 epitaxial thin films

〇Kazuki Shimazoe1, Shota Ishiyama1, Hiroyuki Nishinaka2, Kazutaka Kanegae2, Masashi Kato1 (1.Nagoya Inst. Tech., 2.Kyoto Inst. Tech.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-15]Resistance Dependence of Photocurrent Relaxation and Synapse Application in Pt/Nb:SrTiO3 Junction

〇(M2)Ryosuke Murai1, Yumeng Zheng1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci.)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-W9_324-16]Development of a protective layer for lithium-ion battery separators using a novel Li-doped MAO material

〇Daiki Uto1, Shintaro Yasui2, Akira Nagaoka1,3, Kenji Yoshino1,3 (1.Univ. of Miyazaki, 2.Inst. of Sci. Tokyo, 3.GX Research Lab)
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