Presentation Information

[17p-WL2_101-1]Observation and control of spontaneous in-plane anomalous Hall effect in ferromagnetic oxide films

〇(M1)Haruto Kaminakamura1, Shinichi Nishihaya1, Yuta Matsuki1, Hiroki Sugeno1, Ming-Chun Jiang2,3, Yoshiya Murakami1, Ryotaro Arita2,4, Hiroaki Ishizuka1, Masaki Uchida1,5 (1.Dept. of Physics, Science Tokyo, 2.RIKEN Center for Emergent Matter Science, 3.Dept. of Physics and Center for Theoretical Physics, National Taiwan University, 4.Dept. of Physics, Univ. of Tokyo, 5.Toyota Physical and Chemical Research Institute)

Keywords:

in-plane anomalous Hall effect,ferromagnetic oxide,molecular beam epitaxy

In recent years, in-plane anomalous Hall effect induced by the in-plane magnetic field has attracted attention as a new transport phenomenon reflecting the quantum geometric properties of electronic band structures and crystal symmetry. In this study, we attempt to observe the in-plane anomalous Hall effect and to control spontaneous magnetization in ferromagnets, where this phenomenon had not yet been clarified. As a result, we observe spontaneous in-plane anomalous Hall effect at zero magnetic field in ferromagnetic oxide (111) SrRuO3 ultrathin films. We reveal the nonmonotonic response originating from trigonal distortion in these films. Furthermore, the sign of the in-plane anomalous Hall response at zero magnetic field and the direction of the out-of-plane orbital magnetization can be reversed by controlling the direction of the in-plane spin magnetization.