[17p-WL2_101-1~10] CS.6 Code-sharing Session of 6.3 & 6.4

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-WL2_101-3] Correlation Between Mosaisity and Hydrogen-Induced Properties of Epitaxial LaNiO₃ Thin Films on Zirconia-Buffered Si Substrate

〇(M1)Haruka Zaizen¹, Osamu Nakagawara⁴, Ahrong Jeong³, Hiromichi Ohta³, Haobo Li^1,2, Hidekazu Tanaka^1,2 (1.SANKEN, The Univ. of Osaka, 2.OTRI, 3.RIES, Univ. of Hokkaido, 4.I-PEX Piezo Solutions Inc)

Keywords:

LaNiO3,Silicon substrate,Thermal transistor

The growth of high-quality functional oxide epitaxial thin films on wafer-scale Si substrates is essential for advancing oxide electronics. LaNiO₃, a perovskite oxide with a hydrogenation-induced metal–insulator transition, is promising for thermal-transistor applications. We previously demonstrated heteroepitaxial growth of LaNiO₃ on Pt/ZrO₂-buffered Si and modulation of its thermal conductivity by hydrogenation. This study investigates the correlation among film crystal structure, hydrogenation-induced lattice expansion, and thermal conductivity. LaNiO₃ films of various thicknesses were grown by pulsed laser deposition. Mosaicity was evaluated by X-ray rocking curves, and lattice expansion before and after hydrogenation via ionic-liquid gating was measured. Optimized growth and RTA reduced the rocking-curve FWHM from 1.2° to 0.6°, and smaller-FWHM films showed larger lattice expansion and a greater hydrogenation-induced change in thermal conductivity measured by TDTR.