Presentation Information
[18a-PA1-14]Layer exchange of Miniaturized Ge for Optical Device Applications
〇Yutaka Kiyono1, Takamitsu Ishiyama1, Kaoru Toko1 (1.Tsukuba Univ.)
Keywords:
materials informatics,crystal growth
Using the layer-exchange method, we have demonstrated the formation of Ge thin films with large grain size and high crystallographic orientation even at low temperatures, and shown their effectiveness as seed layers for the epitaxial growth of III–V semiconductors. Because the crystallinity of the III–V layer strongly inherits the grain size and orientation of the Ge seed layer, precise control of the layer-exchange conditions is crucial. In this study, we apply the Ge layer-exchange process to micro-patterned structures to achieve quasi-single-crystallization within the patterns. We use machine-learning analysis to extract shape- and size-dependent behaviors of grain growth and orientation selection, and build a framework for automatically understanding layer-exchange behavior toward optimal pattern design. This will further contribute to low-cost device fabrication on practical substrates.