Presentation Information
[18a-PA1-6]Causal AI Analysis of the Stabilizing Effect of SiN Insulation Films on GaN-HEMT Characteristics
〇Sotaro Kuribayashi1, Jorge Gutierrez-Gil1, Kotaro Shiizaki1, Atsushi Yamada1, Toshihiro Ohki1, Hiroyuki Higuchi1, Hideyuki Jippo1 (1.Fujitsu Limited)
Keywords:
causal discovery,XAI,GaN-HEMT
In this study, we analyzed the effect of the SiN insulating film on the GaN epitaxial layer of GaN-HEMTs using causal AI. The results revealed that before incorporating the SiN insulating film, the effect of Al composition on 2DEG density varied depending on the AlGaN layer thickness. However, after incorporating the SiN insulating film, we automatically discovered from experimental data that increasing the Al composition always increases the 2DEG density, regardless of the film thickness.