Presentation Information
[18a-PA2-3]Wide-Range Tuning of Relaxation Time Constant in ITO/4H-SiC Schottky Junction Reservoirs Using Persistent Photoconductivity
〇(B)Kento Teshima1, Yumeng Zheng1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci.)
Keywords:
semiconductor,reservoir computing,optical device
Physical reservoir computing has attracted significant attention for energy-efficient edge information processing. Reservoir elements require "short-term memory" to retain input history and high environmental resistance. In this study, we investigated the application of Persistent Photoconductivity (PPC) in ITO/4H-SiC Schottky junctions to reservoir computing. The devices were fabricated by depositing ITO electrodes on n-type 4H-SiC substrates via RF sputtering. We evaluated the transient response under 405 nm laser pulses. The results revealed that the relaxation time of the current decay could be effectively controlled by adjusting the applied bias voltage. This tunability allows for the optimization of the short-term memory capability, demonstrating the potential of ITO/4H-SiC junctions as robust optical reservoir devices suitable for harsh environments.