[18a-PA3-1~39] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

English Presentation

[18a-PA3-14] Pressure-Dependence Thermal Pressing Effect on the Resistivity of Nitrogen Doped ZnO Nanoparticle layers

〇Shrestha Dey Monty¹, Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane University, 2.SNCC)

Keywords:

Thermal Pressing,Zinc Oxide Nanoparticles,Thin Film Transistor

Semiconductor nanoparticle (NP) layers represent an emerging paradigm for large-area and flexible electronics, offering superior substrate compatibility, which reduces manufacturing cost and inherent process scalability compared to conventional thin films. For the development of CMOS (Complementary Metal Oxide Semiconductor) logic circuits utilizing thin film transistors (TFTs), both n-type and p-type conduction in particle channel layers are necessary. Previous studies have demonstrated n-channel and p-channel TFT operation using ZnO NP layers [1], but the extremely high sheet resistance of particle layers degraded device performance, limiting their practical application. Our laboratory has developed a novel synthesis method for the fabrication of nitrogen-doped ZnO NPs [2]. Thermal pressing has been reported to reduce the sheet resistance of ZnO NP layers [3], but its effect on nitrogen-doped ZnO NP layers has not yet been systematically investigated. In this research we focus on the pressure dependence of thermal pressing on nitrogen doped ZnO NP layers and its influence on the structural and electrical properties.