The 73rd JSAP Spring Meeting 2026
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Poster presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-PA3-1~39]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 18, 2026 11:30 AM - 1:00 PM JST
Wed. Mar 18, 2026 2:30 AM - 4:00 AM UTC
PA3 (Arena (1F))

[18a-PA3-1]Structural Characterization of Gallium Oxide Thin Films Grown on 4H-SiC Substrates by Mist Chemical Vapor Deposition

〇Taisei Oya1, Kazuyuki Uno1 (1.Wakayama Univ.)

[18a-PA3-2]Defect Level Behavior in β-Ga2O3 Substrates Annealed at High Temperature in Nitrogen

〇Yoshitaka Nakano1, Yuki Ueda2, Kohei Sasaki2, Akito Kuramata2 (1.Chubu Univ., 2.Novel Crystal Technology)

[18a-PA3-3]Growth Temperature Dependence of Structural and Optical Properties of Gallium Oxide Thin Films Grown by Mist CVD on Quartz Glass Substrates

〇Shunsuke Enoki1, Iori Yamasaki1, Misaki Nishikawa1, Masatoshi Koyama1, Kazuto Koike1, Akihiko Fujii1, Toshihiko Maemoto1 (1.Osaka Inst. of Tech.)

[18a-PA3-4]Growth of α-Ga2O3 films on micro-patterned a-plane sapphire substrates

〇(M1)Kotaro Etokoro1, Takeru Wakamatsu1, Kentaro Kaneko2, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Ritsumeikan Univ.)
English Presentation

[18a-PA3-5]Study of temperature-dependent leakage current mechanisms in β-(AlxGa1-x)2O3 Schottky barrier diodes

〇Yun Jia1, Hironori Okumura1, Yui Sasaki1, Kota Nakano1, Takeaki Sakurai1 (1.Univ. of Tsukuba)

[18a-PA3-6]Characterization of Physical Properties and Ultraviolet Response Characteristics of GaOx Thin films Deposited by CSD and Mist-CVD Methods

〇Yuki Nakano1, Iori Yamasaki1, Akito Horibe1, Masatoshi Koyama1, Kazuto Koike1, Akihiko Fujii1, Toshihiko Maemoto1 (1.Osaka Inst. of Tech.)

[18a-PA3-7]Preferential growth of polar In2O3(100) planes by water vapor-assisted sputtering

〇(B)Tomohiro Sakai1, Yuichiro Ebisawa1, JinHyeok Cha2, Tomohiro Yamaguchi1, Shinya Aikawa1 (1.Kogakuin Univ., 2.Chonnam Univ.)

[18a-PA3-8]Effect of input power in remote plasma-enhanced atomic layer deposition on the electrical characteristics of polycrystalline Ga-doped In2O3 channels

〇Hikaru Hoshikawa1, Hiroto Makuuchi1, Takanori Takahashi1, Yukiharu Uraoka1 (1.NAIST)

[18a-PA3-9]Theoretical analysis for structural stability of rutile-type GeO2 surfaces

〇(B)Yuki Murakami1, Toru Akiyama1,2, Takahiro Kawamura1,2 (1.Mie Univ., 2.ICSDF Mie Univ.)

[18a-PA3-10]Fabrication and characterization of Ga-doped rutile GeO2 thin films

〇Fumiyoshi Nishiyama1, Takashi Inomata1, Izumi Hirokazu2 (1.Kisan Kinzoku Chemicals, 2.Hyogo Pref. Inst. of Tech.)

[18a-PA3-11]Simultaneous Frequency–Dissipation QCM Analysis of Amorphous TiOxThin-Film Formation by Ti(acac)2(OiPr)2-Based Mist CVD

〇Hajime Shirai1,2, Fumiya Kobayashi2, Hideki Kurihara3, Yoshiaki Yamamoto4, Haiyan He4, Hirotaka Sone1, Tomomasa Sato2, Nobuyuki Matsuki2, Toshinori Oono4 (1.Saitama Univ., 2.Kanagawa Univ., 3.SAITEC, 4.Amaya Co., Ltd)

[18a-PA3-12]Growth of ZnO on Glass and Sapphire Substrates via Mist CVD

〇(B)Takato Imae1, Arifumi Okada1 (1.Kyoto Inst. Tech)
English Presentation

[18a-PA3-13]Investigation into the Role of Zinc Acetate in Reducing Resistivity of Zinc Oxide Nanoparticle Layers

〇(M2)Anika Islam1, Toshiyuki Yoshida1, Yasuhisa Fujita1,2 (1.Shimane Univ., 2.SNCC)
English Presentation

[18a-PA3-14]Pressure-Dependence Thermal Pressing Effect on the Resistivity of Nitrogen Doped ZnO Nanoparticle layers

〇Shrestha Dey Monty1, Toshiyuki Yoshida1, Yasuhisa Fujita1,2 (1.Shimane University, 2.SNCC)

[18a-PA3-15]Growth of Ga-doped ZnO layer by UHV sputter epitaxy method

〇YUKIHIRO MIYAZAWA1, DAITO IMAI1, KAITO HORIKOSHI1, HARUTO IKEDA1, AOSHI KAMIYA1, KOUTA BAIJU1, TAKEHIRO HIMENO1, KEISUKE YOSHIDA1, HIROYUKI SHINODA1, NOBUKI MUTSUKURA1 (1.Toukyo Denki Univ.)

[18a-PA3-16]Annealing treatment of sputter-grown ZnO layer

〇(B)Daito Imai1, Yukihiro Miyazawa1, Haruto Ikeda1, Kaito Horikoshi1, Yuto Asahi1, Syuji Yamaguchi1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)

[18a-PA3-17]Solid-phase epitaxy of SnO2 films by deep-UV laser annealing and its effect on dopants

〇(M1)Yukata Nakano1, Arata Ito1, Satoru Kaneko1,2, Akifumi Matsuda1 (1.Science Tokyo, 2.KISTEC)

[18a-PA3-18]Orientation Change of Cu2O Films by a Substrate-Heated Sputtering Method

〇Sho Tanaka1, Tuyoshi Torii1, Naoyuki Takada1, Yasuji Yamada1, Shuhei Funaki1 (1.Shimane Univ.)
English Presentation

[18a-PA3-19]Low-Power GaS Phototransistors with Mist-CVD-Grown Al–Ti–O Gate Dielectrics

〇(PC)Abdul A Kuddus1, Tenryu Tamura1, Keiji Ueno2, Hajime Shirai3,2, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.Saitama Univ., 3.Kanagawa Univ.)

[18a-PA3-20]Investigation of deposition conditions to improve flexural resistance in NiO/ZnO-based visible-light-transparent flexible solar cells

〇Taigo Matsui1, Yuna Koide1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)

[18a-PA3-21]Electrical characteristics of amorphous ZnGa2O4 thin films with varying electrode spacing

〇Tomoki Iitsuka1, Yuya Oguma1, Reiya Kase1, Kazunuki Yamamoto2, Satoshi Ishii1 (1.Tokyo Denki Univ., 2.Chiba Univ.)

[18a-PA3-22]Transport property of bulk single crystal IGZTO with Ga sites substituted by Sn

〇Taiki Kouyama1, Maaya Yosida1, Momoka Hirai1, Ryotaro Kokai1, Ryoto Yanagisawa1, Nobuaki Miyakawa1 (1.Tokyo.Univ.of Sci.)

[18a-PA3-23]Transport property of IGZO-13 with Ga sites substituted by In

〇Yuki yamazaki1, Yuto Uruma1, Momoka Hirai1, Ryotaro Kokai1, Tadahito Inoue1, Naoki Kase1, Ryoto Yanagisawa1, Nobuaki Miyakawa1 (1.Tokyo Univ. of Sci.)
English Presentation

[18a-PA3-24]Electrical and optical characterization of PAMBD-deposited GZO transparent conductive films

〇(M1)YI OUYANG1,2, WARAKU KUROSAWA1, TSUTOMU MURANAKA1, YOICHI NABETANI1 (1.Yamanashi Univ., 2.Hangzhou Dianzi Univ.)

[18a-PA3-25]Characterization of ZnO Film for the Development of TFT on Heat-Resistant Flexible Substrate

〇Waraku Kuroswa1, Chihiro Washizu1, Tsutomu Muranaka1, Yoichi Nabetani1, Takashi Matsumoto1 (1.Yamanashi Univ.)

[18a-PA3-26]In-plane positional dependence of electrical properties
of Zn-added GZO films deposited by sputtering

〇(M1C)Tetsuro Shibata1, Yasuji Yamada1, Shuhei Funaki1, Shiyu Sano1 (1.Shimane Univ)

[18a-PA3-27]Impact of Ambient Atmosphere Control on Transfer Characteristics of In2O3 Thin-Film Transistors Fabricated by a Vacuum-Ultraviolet Excimer-Light-Assisted Solution Process

〇Kazuki Ueda1, Hideya Ochiai1, Takuya Nomura1, Akira Fujimoto1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Toshihiko Maemoto1 (1.Osaka Inst. of Tech., 2.Ushio Inc.)

[18a-PA3-28]Comparison of In2O3-based flexible transparent conductive films prepared by sputtering in hydrogen-containing atmospheres

〇(B)Shu Ishigami1, Yuya Yasaki1, Yuma Matsufuji1, Shinya Aikawa1 (1.Kogakuin Univ.)

[18a-PA3-29]Electrochemical performance of lithium-ion battery separators with a MAO base protective layer

〇Daiki Uto1, Kenji Yoshino1,2 (1.Univ. of Miyazaki, 2.GX Research Lab.)

[18a-PA3-30]Deposition of Nickel Copper Hydroxide Films and their Photocatalytic Properties

〇Koji Abe1, Dowon Kim1 (1.Nagoya Inst. Tech.)

[18a-PA3-31]Fabrication and characterization of top-gate IGZO synaptic transistors using PVA gate insulators

〇Yuki Kasama1, Yuji Iwasawa1, Shinya Aikawa1 (1.Kogakuin Univ.)

[18a-PA3-32]Comparison of gate insulator properties sputter-deposited at room temperature and their implementation in TFTs

〇Ko Ishihara1, Koga Nakamura1, Kazuho Ishii1, Shinya Aikawa1 (1.Kogakuin Univ.)

[18a-PA3-33]Quantitative Evaluation of Interface State Density in Top-Gate In-Ga-O Nanosheet MOS Capacitors

〇Nao Ogasawara1, Mutsunori Uenuma2, Takanori Takahashi1, Yukiharu Uraoka1 (1.NAIST, 2.AIST)

[18a-PA3-34]Effect of surface morphology on gas sensitivity of SnO2-based CO2 gas sensors fabricated by Electrostatic Spray Deposition

〇Rikuto Sekimura1, Taisei Hattori1, Kanata Tanaka1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)

[18a-PA3-35]Current-Voltage and Pulse Driving Properties of Pt/ZnO Nanorods Heterojunctions

Ren Ueno1, 〇Tomoaki Terasako2, Masakazu Yagi3, Tetsuya Yamamoto4 (1.Fac. Eng., Ehime Univ., 2.Grad. Sch. Sci. Eng., Ehime Univ., 3.Natl. Inst. Technol., Kagawa Col., 4.Res. Inst., Kochi Univ. Technol.)

[18a-PA3-36]Humidity-Dependent Electrical Characterization and Conduction Mechanism of SnSO4 Thin Films

〇(M2)Kento Moriya1, Sokichi Naganawa1, Yukihiro Kudoh1, Taiju Takahashi1, Tomohiro Yamaguchi1, Shinya Aikawa1 (1.Kogakuin Univ.)

[18a-PA3-37]Impact of Si Substrate Crystal Orientation on SnO Sputter Deposition
and TFT Characteristics

〇Yoshikazu Shin1, Ishii Kazuho1, Aikawa Shinya1 (1.Kougakuin Univ.)

[18a-PA3-38]Impact of Nb and La Doping on Carrier Lifetime in SrTiO3

〇(P)Endong Zhang1, Masashi Kato1 (1.NITech)

[18a-PA3-39]Thin-Films Synthesis of Transparent Conducting Ta:SrSnO3 by Solid-Phase Epitaxy

〇(M1)Haruka Shibata1, Daichi Oka1, Shunsuke Miyaji1, Yasushi Hirose1 (1.Tokyo Metropolitan Univ.)
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