Presentation Information
[18a-PA3-35]Current-Voltage and Pulse Driving Properties of Pt/ZnO Nanorods Heterojunctions
Ren Ueno1, 〇Tomoaki Terasako2, Masakazu Yagi3, Tetsuya Yamamoto4 (1.Fac. Eng., Ehime Univ., 2.Grad. Sch. Sci. Eng., Ehime Univ., 3.Natl. Inst. Technol., Kagawa Col., 4.Res. Inst., Kochi Univ. Technol.)
Keywords:
ZnO,pulse driving,memristor
In the present study, we will discuss current-voltage and pulse driving properties of sputtered Pt/CBD-grown ZnO nanorods heterojunctions. The heterojunctions exhibited the increse in device current with increasing number of voltage sweeps only under the irradiation of UV light. The forward device current was increased by the increase in the number of positive stimulation pulse voltage (potentiation), but was decreased by the increase in the number of negative stimulation pulse voltage (depression), indicating that the conductance of the device can be controlled by the polarity and number of the stimulation pulses. When two positive stimulation pulse voltages were applied to the device, the ratio of the forward device current generated by the second positive stimulation pulse voltage to that by the first positive stimulation pulse voltage (PPF index) was increased with decreasing time interval Δt between the two pulses.