Presentation Information
[18a-PB1-15]Resistive Switching Memory Characteristics of Polymeric Carbon Nitride
Thin Films Deposited by Thermal Chemical Vapor Deposition
〇Keigo Sugiyama1, Hiroki Yanagisawa1, Kei Noda1 (1.Keio Univ.)
Keywords:
Resistive Switching Memory,Polymeric Carbon Nitride
In this study, we constructed a memristor device using a g-C3N4 thin film fabricated by thermal CVD as a resistance change layer and evaluated its resistance change memory characteristics. We clarified the material properties of g-C3N4and the effectiveness of thin film fabrication for memory applications.