[18a-S2_204-1~6] 23.1 Joint Session N "Informatics"

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[18a-S2_204-2] Numerical Simulation of Convection Diffusion Transition in SiGe Crystal Growth under Different Gravity Levels

〇(B)Ryusei Tsuboi¹, Souta Miyamoto¹, Katsuaki Tanabe¹ (1.Kyoto Univ.)

Keywords:

Silicon Germanium,Phase-Field Models,Lattice Boltzmann Method

We investigated the influence of microgravity on SiGe crystal growth using numerical simulations that couple momentum, heat, and solute transport with interface dynamics. Focusing on the molten-zone vicinity in a floating-zone configuration, the gravitational acceleration was varied from 0 to 10⁵ G and the time evolution was computed for ~0.02 s. The results indicate that at g ≥ 10⁴ G, transport becomes convection-dominated and the growth interface tends to flatten. In contrast, under the present conditions, microgravity did not yield a clear improvement in either the concentration variance or the time-averaged effective partition coefficient.