[18a-S4_201-1~6] 3.6 Laser processing

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[18a-S4_201-1] Influence of laser processing point in GaN crystal on laser slicing

〇Atsushi Tanaka¹, Toshiki Yui², Yoshinori Tokuda³, Takayuki Koyama³, Yoshio Honda¹, Junji Ohara³, Yoshitaka Nagasato³, Shoichi Onda¹, Jun Suda¹, Hiroshi Amano¹ (1.Nagoya Univ., 2.Hamamatsu Photonics K.K., 3.MIRISE Technologies Corp.)

Keywords:

laser slicing,GaN

During laser processing in GaN, we observed differences in the stresses generated between processing points depending on the size and pitch of the processing points. We also discovered that these differences influence the manifestation of laser slicing.