[18a-W9_323-1~10] CS.7 Code-sharing Session of 6.5 & 7.5

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-W9_323-6] Nonlinear O₂ pressure dependence of Si dry oxidation: Role of hot hole trapping

〇Yuki Okabe¹, Yasutaka Tsuda², Hengyu Wen¹, Akitaka Yoshigoe², Yuji Takakuwa³, Shuichi Ogawa¹ (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)

Keywords:

Si thermal oxidation,real time XPS,surface reaction

The oxidation process of the Si(001) surface was observed in real time by XPS, and thermal hole trapping in the nonlinear oxygen-pressure dependence of Si surface oxidation was investigated based on the oxide thickness and oxygen adsorption curves. It was found that the nonlinear oxygen-pressure dependence of Si surface oxidation is caused by an oxidation loop (Loop B) in which activated vacancies and Pb centers act as active sites for the oxidation reaction. The branching between the oxidation loop involving only activated vacancies as active reaction sites (Loop A) and Loop B is governed by minority carrier trapping and thermal hole trapping. Since thermal hole trapping exhibits a linear dependence on oxygen pressure, Loop A approaches a linear oxygen-pressure dependence.