[18a-WL1_201-1~8] 6.4 Thin films and New materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-WL1_201-8] Crystallization Process in Amorphous ITO Thin Films by KrF Excimer Laser Annealing

〇Hisato Yabuta^1,2, Maiki Sato¹, Dongyang Guo¹, Kakeru Miyata¹, Shinnosuke Uetsuki¹, Keita Katayama^1,2 (1.ISEE, Kyushu Univ., 2.Gigaphoton NextGLP, Kyushu Univ.)

Keywords:

excimer laser annealing,transparent conductive film,solid phase crystallization

We have investigated the crystallization process of ITO thin films (100 nm) by laser annealing using a KrF excimer laser with the capability of high repetition rate irradiation. Under conditions of 60 mJ/cm² fluence and 2000 Hz repetition frequency, X-ray diffraction measurements confirmed that crystallization of the ITO thin film started after 1200 irradiation cycles. After 2000 cycles, the amorphous phase disappeared and transformed into a polycrystalline film with [111] preferred orientation.