[18a-WL2_101-1~11] 13.8 Optical properties and light-emitting devices

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-WL2_101-7] Geometrical design consideration for Eu-doped GaN micro-LEDs

〇Hodaka Kubo¹, Yuya Hinokuchi², Keito Mori-Tamamura¹, Yasufumi Fujiwara³, Kazunobu Kojima¹, Shuhei Ichikawa^1,4 (1.Grad. Sch. Eng., The Univ. of Osaka, 2.The Univ. of Osaka, 3.ROST, Ritsumeikan Univ., 4.Research Center for UHVEM, The Univ. of Osaka)

Keywords:

Rare earth-doped semiconductor,Micro-LED,Eu-doped GaN

Eu-doped GaN (GaN:Eu) is attracting attention for realizing high-definition, high-brightness three-primary-color micro-LEDs. While GaN:Eu suppresses quantum efficiency degradation caused by surface recombination during miniaturization, a decrease in internal quantum efficiency has been observed in devices smaller than 20 μm square. In such fine devices, it is suggested that not only surface recombination effects but also strain relaxation due to exposed free surfaces may alter the excitation efficiency of Eu ions. Therefore, this study focused on strain relaxation and evaluated the light-emitting characteristics.