[18a-WL2_301-1~10] 3.8 Terahertz technologies

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[18a-WL2_301-8] Measurement of electrical properties and thickness for ultrathin GaN films on ScAlMgO₄ substrates grown by RF-MBE using THz-TDSE

〇Takashi Fujii^1,2, Kaito Tsuchida¹, Toshiyuki Iwamoto², Trang Nakamoto¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.NIPPO PRECISION)

Keywords:

THz Time-Domain Spectroscopic Ellipsometry,GaN,ScAlMgO4

GaN thin films were grown on a ScAlMgO₄ single crystal substrate using RF-MBE method, and the electrical properties and film thickness were measured by THz-TDSE. Considering the characteristic impedance of the conventional Fresnel and Drude formulas, we have succeeded in measuring film thicknesses up to about 800 nm. In this time, we measured GaN measurements with a film thickness of 370 nm. However, although the electrical properties could be measured, the film thickness could not be determined. We will report on the consideration of this factor.