[18a-WL2_401-1~11] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-WL2_401-5] Ultra-Low Crosstalk 1×2 Silicon MZI Switch Enabled by Ge₂Sb₂Te₃S₂ Intensity Modulator

〇(M2)Kenji Kobayashi¹, Yuto Miyatake¹, Rui Tang¹, Kotaro Makino², Shogo Hatayama², Makoto Okano², Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.The Univ. of Tokyo, 2.AIST)

Keywords:

Silicon Photonics,Optical Switch,Phase Change Material

In this study, we propose a termination-absorptive 1×2 MZI optical switch using a wide-bandgap phase-change material, Ge₂Sb₂Te₃S₂ (GSTS), as an optical intensity modulator. In the proposed scheme, GSTS is integrated at the output waveguide termination of the MZI, and the GSTS at the off port is crystallized to absorb leakage light at the termination. This enables a significant reduction in crosstalk compared with conventional approaches, making the proposed device a suitable building block for large-scale silicon photonic optical switches.