[18p-S2_203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[18p-S2_203-2] Study On the Statistical Variability of High-Performance Crystalline InGaOx Nanosheet Oxide Semiconductor FETs

〇(DC)Xingyu Huang¹, Kota Sakai¹, Anlan Chen¹, Takanori Takahashi³, Mutsunori Uenuma², Yukiharu Uraoka³, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo, 2.AIST, 3.NAIST)

Keywords:

Oxide Semiconductor,Statistical Variability,Nanosheet

Monolithic 3D integration of memory arrays on a computing chip and 3D memory such as 3D DRAM have emerged as promising solutions for high density integration of transistors and memory devices. For those 3D device applications, oxide semiconductor (OS) is a promising candidate because of its low temperature process, high mobility and low leakage. While amorphous OS (a-OS) FETs are commonly studied, poly OS FETs are getting more attention to increase the performance. One key challenge of emerging semiconductor materials is their characteristics variability, which is important for chip design and manufacturing. In this work, we fabricate poly InGaOx (IGO) FET arrays with L_g=60nm as well as a-IGO FET arrays and systematically investigate characteristics variability.