[18p-W8E_101-1~10] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[18p-W8E_101-10] Effects of Nitrogen Radical Irradiation on Electrical Properties of Ga₂O₃ (010) FinFETs

〇Zhenwei Wang¹, Jin Inajima², Yoshiki Iba³, Kohki Tsujimoto², Yuma Terauchi³, Yusuke Teramura², Junya Yoshinaga^3,4, Takafumi Kamimura¹, Yoshinao Kumagai³, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ., 3.Tokyo Univ. of Agric. and Tech., 4.TAIYO NIPPON SANSO CORP.)

Keywords:

gallium oxide,FinFET,nitrogen radical irradiation

Effects of nitrogen radical irradiation (nitridation) on electrical properties of vertical Ga₂O₃ (010) fin field-effect transistors (FinFETs) were studied. The nitridated FinFETs exhibited positive threshold voltage shift with an improved in-plane uniformity of device characteristics. The specific on-resistance of 9.5 mΩcm², breakdown voltage of 1213 V, and power figure of merit of 0.15 GWcm^-2 were achieved by a multi-FinFET with a fin width of 300 nm.