The 73rd JSAP Spring Meeting 2026
Advanced Search

Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[18p-W8E_101-1~10]13.7 Compound and power devices, process technology and characterization

Wed. Mar 18, 2026 1:30 PM - 4:15 PM JST
Wed. Mar 18, 2026 4:30 AM - 7:15 AM UTC
W8E_101 (West Bldg. 8)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[18p-W8E_101-1]Principles and Mechanisms of Measurement Stability in High-Voltage and Ultra-Low Current Regions— Application to Wafer-Level 1 kV-Class Mass Production Testing —

〇TAKEKI ANDO1,2 (1.FormFactor Inc, 2.ONC Inc)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[18p-W8E_101-2]Characterization of carrier transport characteristics in r-GeO2 by DC/AC Hall effect measurements.

〇Yuri Shimizu1, Tadayoshi Deguchi2, Toyosuke Ibi1, Shinpei Matsuda1 (1.Patentix Inc., 2.Nisshinbo Micro Devices Inc.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-3]Ab initio characterization of split-type impurity-vacancy pairs in β-Ga2O3

〇Ryota Yamada1, Sosuke Iwamoto1, Masahiro Hara1, Heiji Watanabe1, Takuma Kobayashi1 (1.UOsaka)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-4]Development of High-Frequency Ga2O3 Schottky Barrier Diodes for Application to Rectenna Circuits for Mcrowave Wireless Power Transmission

〇(M1)Yuto Tabata1, Yudai Suehiro1, Romualdo A. Ferreyra1, Takuya Tsutsumi1, Shun Konno2, Kosuke Usui2, Daisuke Matsuo2, Yoshiki Iba3, Yuma Terauchi3, Junya Yoshinaga3,4, Yoshinao Kumagai3, Yasuo Ohno5, Masataka Higashiwaki1,6 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment, 3.Tokyo Univ. of Agric. and Tech., 4.TAIYO NIPPON SANSO CORPORATION, 5.Laser Systems Inc., 6.NICT)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[18p-W8E_101-5]β-Ga2O3 Trench-Implemented MOS Schottky Barrier Diodes with Breakdown Voltage of 1844 V and PFOM of 0.81 GW/cm2

〇Akio Takatsuka1, Hironobu Miyamoto1, Kohei Sasaki1, Akito Kuramata1 (1.Novel Crystal Technology, Inc.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-6]Ga2O3 MOS Capacitors with Si-Implanted AlOx Insulators

〇(M1)Keita Shoji1, Daisuke Matsuo2, Shun Konno2, Kosuke Usui2, Yasunori Andoh3, Kohei Tanaka2, Masataka Higashiwaki1,4 (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment, 3.Nissin Electric, 4.NICT)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-7]The Effects of Pre-Deposition Treatments on ALD-Al2O3/β-Ga2O3 MOS Interface Properties: Degradation by TMAH Etching and Improvement by O3 Surface Oxidation

〇Hayama Imaida1, Atsushi Tamura2, Koji Kita1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-W8E_101-8]Improvement of SiO2/β-Ga2O3 (001) MOS interface properties employing ALD with O3 as an oxidant under low-temperature process (600°C)

〇Atsushi Tamura1, Hayama Imaida2, Koji Kita1,2 (1.GSFS, The Univ. of Tokyo, 2.School of Eng., The Univ. of Tokyo)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[18p-W8E_101-9]Multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV

〇Daiki Wakimoto1, Chia-Hung Lin1, Kentaro Ema1, Yuki Ueda1, Hironobu Miyamoto1, Kohei Sasaki1, Akito Kuramata1 (1.Novel Crystal, inc.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[18p-W8E_101-10]Effects of Nitrogen Radical Irradiation on Electrical Properties of Ga2O3 (010) FinFETs

〇Zhenwei Wang1, Jin Inajima2, Yoshiki Iba3, Kohki Tsujimoto2, Yuma Terauchi3, Yusuke Teramura2, Junya Yoshinaga3,4, Takafumi Kamimura1, Yoshinao Kumagai3, Masataka Higashiwaki1,2 (1.NICT, 2.Osaka Metropolitan Univ., 3.Tokyo Univ. of Agric. and Tech., 4.TAIYO NIPPON SANSO CORP.)
Back to Category List