Presentation Information

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-WL2_301-4]THz Plasmonic Detector Based on a Grating-Gate InGaAs-Channel HEMTwith an InP Barrier Layer

〇Masaki Nagatsu^1,2, Yoshinaka Sho^1,3, Takida Yuma⁴, Minamide Hiroaki⁴, Lin Tsung-Tse¹, Satou Akira¹ (1.RIEC, Tohoku Univ., 2.Grad. Sch. of Eng., Tohoku Univ., 3.Sch. of Eng., Tohoku Univ., 4.RIKEN RAP)

Keywords:

semiconductor,HEMT,THz Detector

To realize beyond-5G wireless communication networks, we developed an InGaAs-channel high-electron-mobility transistor (HEMT) featuring an InP barrier layer to enhance the responsivity of room-temperature terahertz (THz) detectors. While we successfully demonstrated its detection operation at 1.0 THz, the output voltage was lower than anticipated. Fitting analysis of the $I-V$ characteristics indicates that electron tunneling through the barrier is the dominant transport process, rather than thermionic emission over the barrier. These results suggest that further responsivity improvements can be achieved by reducing the band offset.

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