[16p-S4_201-13~19] 10.3 Spin devices, magnetic memories and storages | The 73rd JSAP Spring Meeting 2026

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Oral presentation10 Spintronics and Magnetics : 10.3 Spin devices, magnetic memories and storages

[16p-S4_201-13~19]10.3 Spin devices, magnetic memories and storages

Mon. Mar 16, 2026 5:15 PM - 7:00 PM JST
Mon. Mar 16, 2026 8:15 AM - 10:00 AM UTC

S4_201 (South Bldg. 4)

Chair : Takahide Kubota(Tohoku Univ.)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)English Presentation

[16p-S4_201-13]Field-free current-induced magnetization switching in 2D-MXene/FM bilayers originating from induced magnetic moment at interface

Prabhat Kumar¹, Shunsuke Tsuda¹, Koichiro Yaji^1,2, 〇Shinji Isogami¹ (1.NIMS, 2.UDAC, Tohoku Univ.)

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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16p-S4_201-14]Current-induced magnetization switching in polycrystalline 2D-MXene/FM bilayers fabricated on thermally-oxidized Si substrates

〇(M1)Mayank Kumar Singh¹, Yukiko Takahashi¹, Shinji Isogami¹ (1.NIMS)

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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16p-S4_201-15]Efficient magnetization switching driven by spin–orbital torque in light 3d transition-metal nitrides

〇(P)GAURAV KUMAR SHUKLA¹, PRABHAT Kumar¹, Mayank K. Singh¹, Shinji Isogami¹ (1.NIMS)

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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16p-S4_201-16]Large Spin-Orbit Torque Induced by Highly Textured BiSb(012) Topological Insulator Deposited on Si/SiO_2 Substrates Using Oxide Buffer/Seed Stack

〇(M2)Wentao Li¹, Hoang Huy Ho¹, Xiaokun Yan¹, Van Thuan Pham¹, Shigeyuki Hirayama², Yushi Kato², Nam Hai Pham¹ (1.Science Tokyo, 2.Samsung Japan Corp.)

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6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16p-S4_201-17]Spin-Transfer Torque Efficiency in Coupled Synthetic Free Layers Studied with Stochastic Magnetic Tunnel Junctions

〇Takuma Kinoshita¹, Mototsugu Ohtani¹, Nuno Cacoilo¹, Haruna Kaneko¹, Shun Kanai¹, Hideo Ohno¹, Shunsuke Fukami¹ (1.Tohoku Univ.)

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6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)English Presentation

[16p-S4_201-18]Reduction of write-error rate for a voltage-controlled MRAM with nonlinear voltage-dependent magnetic anisotropy by using short-time reverse bias method

〇Rie Matsumoto¹, Hiroshi Imamura¹ (1.AIST)

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6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)English Presentation

[16p-S4_201-19]Anomalous Nernst effect in Co-Pt thin film fabricated by electrodeposition method

〇Yuichiro Kurokawa¹, Rio Kawana², Keisuke Yamada², Hiromi Yuasa¹ (1.Kyushu Univ., 2.Gifu Univ.)

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