セッション詳細
[16p-S4_201-13~19]10.3 スピンデバイス・磁気メモリ・ストレージ技術
2026年3月16日(月) 17:15 〜 19:00
S4_201 (南4号館)
座長：窪田 崇秀(東北大)
[16p-S4_201-13]Field-free current-induced magnetization switching in 2D-MXene/FM bilayers originating from induced magnetic moment at interface
Prabhat Kumar1, Shunsuke Tsuda1, Koichiro Yaji1,2, 〇Shinji Isogami1 (1.NIMS, 2.UDAC, Tohoku Univ.)
[16p-S4_201-14]Current-induced magnetization switching in polycrystalline 2D-MXene/FM bilayers fabricated on thermally-oxidized Si substrates
〇(M1)Mayank Kumar Singh1, Yukiko Takahashi1, Shinji Isogami1 (1.NIMS)
[16p-S4_201-15]Efficient magnetization switching driven by spin–orbital torque in light 3d transition-metal nitrides
〇(P)GAURAV KUMAR SHUKLA1, PRABHAT Kumar1, Mayank K. Singh1, Shinji Isogami1 (1.NIMS)
[16p-S4_201-16]Large Spin-Orbit Torque Induced by Highly Textured BiSb(012) Topological Insulator Deposited on Si/SiO_2 Substrates Using Oxide Buffer/Seed Stack
〇(M2)Wentao Li1, Hoang Huy Ho1, Xiaokun Yan1, Van Thuan Pham1, Shigeyuki Hirayama2, Yushi Kato2, Nam Hai Pham1 (1.Science Tokyo, 2.Samsung Japan Corp.)
[16p-S4_201-17]Spin-Transfer Torque Efficiency in Coupled Synthetic Free Layers Studied with Stochastic Magnetic Tunnel Junctions
〇Takuma Kinoshita1, Mototsugu Ohtani1, Nuno Cacoilo1, Haruna Kaneko1, Shun Kanai1, Hideo Ohno1, Shunsuke Fukami1 (1.Tohoku Univ.)
[16p-S4_201-18]Reduction of write-error rate for a voltage-controlled MRAM with nonlinear voltage-dependent magnetic anisotropy by using short-time reverse bias method
〇Rie Matsumoto1, Hiroshi Imamura1 (1.AIST)
[16p-S4_201-19]Anomalous Nernst effect in Co-Pt thin film fabricated by electrodeposition method
〇Yuichiro Kurokawa1, Rio Kawana2, Keisuke Yamada2, Hiromi Yuasa1 (1.Kyushu Univ., 2.Gifu Univ.)