[H1-O302] Oral 302 | Materials Research Meeting 2025 (MRM2025)

Session Details

Oral SessionH．High-Performance Functional Materials: Preparation, Processing, and Characterization : [H-1]Ferroelectric materials and their application

[H1-O302]Oral 302

Thu. Dec 11, 2025 1:00 PM - 5:30 PM JST
Thu. Dec 11, 2025 4:00 AM - 8:30 AM UTC

Session 11(G213)

Chair:Takao Shimizu(National Institute for Materials Science), Peggy Qi Zhang(CSIRO)

1:00 PM - 1:40 PM JST(4:00 AM - 4:40 AM UTC)

[H1-O302-01]Comparative study of HfO₂-based and Wurtzite-based ferroelectrics from epitaxial film study

*Hiroshi Funakubo¹, Kazuki Okamoto¹, Takanori Mimura², Takao Shimizu^3,1 (1. Institute of Science Tokyo (Japan), 2. Gakushuin Univ. (Japan), 3. National Institute for Materials Science (NIMS), (Japan))

1:40 PM - 2:00 PM JST(4:40 AM - 5:00 AM UTC)

[H1-O302-02]Simulation study on polarity switching dynamics in ferroelectric aluminum nitride and its related solid solutions

Kota Hasegawa^1,2, Takao Shimizu¹, *Naoki Ohashi^1,2,3 (1. Natl. Inst. Mat. Sci. (Japan), 2. Kyushu Univ. (Japan), 3. Inst. Sci. Tokyo (Japan))

2:00 PM - 2:20 PM JST(5:00 AM - 5:20 AM UTC)

[H1-O302-03]Pulse Width Dependence of Ferroelectric Switching in AlScN films

*Hirofumi Nishida¹, Si-Meng Chen¹, Takuya Hoshii¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹, Kuniyuki Kakushima¹ (1. Institute of Science Tokyo (Japan))

2:20 PM - 2:40 PM JST(5:20 AM - 5:40 AM UTC)

break

2:40 PM - 3:00 PM JST(5:40 AM - 6:00 AM UTC)

[H1-O302-04]Control of Polarizations in Dielectrics: From Interfacial Effect to Domain Structure Modulation

*Takashi Teranishi^1,2 (1. Okayama University (Japan), 2. Institute of Science Tokyo (Japan))

3:00 PM - 3:20 PM JST(6:00 AM - 6:20 AM UTC)

[H1-O302-05]Changes in the electronic structure of BaTiO₃ due to ferroelectric phase transition using polarization-dependent hard x-ray photoemission spectroscopy

*Takeo Ohsawa¹, Shigenori Ueda^1,2, Takao Shimizu¹, Naoki Ohashi^1,3 (1. National Institute for Materials Science (Japan), 2. Synchrotron X-ray Station at SPring-8, NIMS (Japan), 3. MDX Research Center for Element Strategy, Tokyo Institute of Technology (Japan))

3:20 PM - 3:40 PM JST(6:20 AM - 6:40 AM UTC)

[H1-O302-06]Epitaxial Growth of (Rb, K)NbO₃ Solid-Solution Thin Films by Chemical Solution Deposition

*Ayumu Masuda^1,2, Yuya Taguchi¹, Tatsuya Masuda², Yosuke Hamasaki³, Yoshitaka Ehara³, Hiroki Moriwake^1,2, Yoshinao Kobayashi¹, Shintaro Yasui¹ (1. Science Tokyo (Japan), 2. JFCC (Japan), 3. NDA (Japan))

3:40 PM - 3:50 PM JST(6:40 AM - 6:50 AM UTC)

Closing Remark

3:50 PM - 5:30 PM JST(6:50 AM - 8:30 AM UTC)

Time adjustment

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