Session Details

Short presentation for poster session-2

Wed. Apr 22, 2026 9:00 AM - 10:00 AM JST
Wed. Apr 22, 2026 12:00 AM - 1:00 AM UTC
211+212 (Pacifico Yokohama Conference Center)
Session Chair: Tomoyuki Tanikawa (Osaka Univ.)

[LEDIA4-01]Continuous-Wave Operation of AlGaN-Based UV-B Laser Diodes Enabled by Low-Temperature Epitaxial Growth and Device Optimization

*Takumu Saito1, Rintaro Miyake1, Shundai Maruyama1, Yusuke Sasaki1, Shogo Karino1, Seiya Kato1, Naoki Kitta1, Ryota Watanabe1, Yuma Miyamoto1, Shion Kamiya1, Sho Iwayama1, Hideto Miyake2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1. Meijo University, 2. Mie University)
Comment()

[LEDIA4-02]Reduction of Internal Optical Loss and Enhanced COD Levels in AlGaN-Based UV-B Laser Diodes via Well–Guide Bandgap Engineering

*Kenta Kitagawa1, Takumu Saito1, Rintaro Miyake1, Naoki Kitta1, Seiya Kato1, Ryota Watanabe1, Yuma Miyamoto1, Shion Kamiya1, Sho Iwayama1, Hideto Miyake2, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1. Meijo University, 2. Mie University)
Comment()

[LEDIA4-03]Emission Enhancement of InGaN/GaN Quantum Wells Using Metal/Dielectric Thin Films

*Shun Ito1, Naoki Ueda1, Kai Funato1, Tetsuya Matsuyama1, Shunsuke Murai1, Kenji Wada1, Mitsuru Funato2, Yoichi Kawakami2, Koichi Okamoto1 (1. Osaka Metropolitan University, 2. Kyoto University)
Comment()

[LEDIA4-04]Identification of killer defects in AlGaN-based UV-B laser diodes through one-to-one correlation between crystal defects and device characteristics

*Seiya Kato1, Takumu Saito1, Rintaro Miyake1, Shundai Maruyama1, Yusuke Sasaki1, Shogo Karino1, Shion Kamiya1, Naoki Kitta1, Ryota Watanabe1, Yuma Miyamoto1, Sho Iwayama1, Hideto Miyake2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1. Meijo University, 2. Mie University)
Comment()

[LEDIA4-05]Distinct optimal growth temperatures for optical gain formation in AlGaN-Based UV-B laser diodes

*Rintaro Kobayashi1, Shundai Maruyama1, Takumu Saito1, Rintaro Miyake1, Seiya Kato1, Naoki Kitta1, Ryota Watanabe1, Yuma Miyamoto1, Shion Kamiya1, Tomoya Tanikawa1, Kenta Kitagawa1, Sho Iwayama1, Hideto Miyake2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1. Meijo University, 2. Mie University)
Comment()

[LEDIA4-06]Fabrication of Vertical AlGaN UV-B Laser Diodes through Substrate Exfoliation using Pressurized and Heated Water

*Eri Matsubara1, Yusuke Sasaki1, Takumu Saito1, Rintaro Miyake1, Sho Iwayama1, Hideto Miyake2, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1. Meijo University, 2. Mie University)
Comment()

[LEDIA4-07]Color Tuning of InGaN LEDs via Field Effect

*HOI WAI CHOI1, Bo Lu1 (1. University of Hong Kong)
Comment()

[LEDIA4-08]Influence of Growth Interruption on Luminescence Properties of GaN:Eu/GaN Multilayer Structures

*Tensho Minami1, Kazutsune Miyanaga1, Takeo Ogura1, Norio Kanzaki1, Tsutomu Araki1, Yasufumi Fujiwara1 (1. Ritsumeikan University)
Comment()

[LEDIA4-09]Evaluation of Damage Penetration Length in Micro-LEDs Using Ray-Tracing Simulation

Kento Miwa1, Takahiro Sumino1, Misaki Shirakawa1, Wataru Yamamoto1, Satoshi Kurai1, *Narihito Okada1, Yoichi Yamada1 (1. Yamaguchi Univ.)
Comment()

[LEDIA4-10]Wavelength extension and device characteristics of AlGaN-based UV-B LD via AlN mole fraction Control

*Tomoya Tanikawa1, Takumu Saito1, Rintaro Miyake1, Seiya Kato1, Naoki Kitta1, Ryota Watanabe1, Sion Kamiya1, Yuma Miyamoto1, Rintaro Kobayashi1, Kenta Kitagawa1, Sho Iwayama1, Hideto Miyake2, Satosi Kamiyama1, Tetuya Takeuchi1, Motoaki Iwaya1 (1. Meijo University, 2. Mie University)
Comment()

[LEDIA4-11]Enhanced Upward Light Extraction in 1D GaN Nanorod-Based Light-Emitting Diodes Using Reflective Layers

*Seoeun Kang1, Sohyeon Kim1, Sunwoo Lim2, Go-Eun Bang1, Yoonhee Kang3, Kyoung-Kook Kim1,2,3 (1. Department of Semiconductor Engineering and Research Institute of Advanced Convergence Technology, Tech University of Korea, 2. Department of IT Semiconductor Convergence Engineering, and Research Institute of Advanced Convergence Technology, Tech University of Korea, 3. Carbon neutral innovation center, Tech University of Korea)
Comment()

[LEDIA4-12]Light Extraction Enhancement in Self-Aligned GaN Nanorod LEDs via Pt Nanoparticle-Induced Surface Plasmon Effect

*Jeongmin Lee1, Sunwoo Lim2, Jae-Hun Jeong2, Jeonghye Yoon1, Sohyeon Kim1, Kyoung-Kook Kim1,2 (1. Department of Semiconductor Engineering and Research Institute of Advanced Convergence Technology, Tech University of Korea, 2. Department of IT Semiconductor Convergence Engineering and Research Institute of Advanced Convergence Technology, Tech University of Korea)
Comment()