[Tu2-P31] Sub area 3-1 : Materials, Processes, Fundamentals

[Tu2-P31-06] Analysis of crystal defects inside mono-cast Si ingot using PL imaging

*Hidetaka Hirono¹, Hitoshi Matsuo², Hideyoshi Tanabe², Noritaka Usami^1,3,4 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Kyocera corporation (Japan), 3. InFuS, Nagoya university (Japan), 4. IMaSS, Nagoya university (Japan))