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Sub area 3-1: Materials, Processes, FundamentalsArea3: Wafer-based Silicon Photovoltaics : Sub area 3-1: Materials, Processes, Fundamentals

[Tu2-P31]Sub area 3-1 : Materials, Processes, Fundamentals

Tue. Nov 12, 2024 11:00 AM - 12:30 PM JST
Tue. Nov 12, 2024 2:00 AM - 3:30 AM UTC
PS-11/Multipurpose Hall (1F)

[Tu2-P31-01]Solar silicon: the past, the present, and the Future

*Chung-wen Lan1 (1. National Chinese Taipei University (Chinese Taipei))

[Tu2-P31-02]Temperature Dependence of the Ambipolar Auger Coefficient in Crystalline Silicon

*Lachlan E. Black1, Yan Zhu2, Ziv Hameiri2, Daniel H. Macdonald1 (1. Australian National University (Australia), 2. University of New South Wales (Australia))

[Tu2-P31-03]On the nature of separated striations in n-type Czochralski silicon solar cells

*Guixiu Li1,2, Shuai Yuan1,2, Shenglang Zhou3, Yihua Wu3, Hongrong Chen3, Huali Zhang3, Chen Wang3, Lei Wang1, Xuegong Yu1, Deren Yang1,2 (1. State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University (China), 2. Shangyu Institute of Semiconductor Materials (China), 3. Jiangsu GCL Silicon Material Technology Development Co., Ltd (China))

[Tu2-P31-04]Electrical property of iron-decorated stacking fault and its hydrogenation in n-type Czochralski silicon used for photovoltaic

*Ruokai Wu1, Xuegong Yu1, Deren Yang1 (1. Zhejiang University (China))

[Tu2-P31-05]Effects of carbon concentration in silicon crystal on the concentration of defects induced by IWO-RPD process

*Keita Kimura1, Tomohiko Hara1,2, Yoshio Ohshita1 (1. Toyota Technological Institute (Japan), 2. Ritsumeikan University (Japan))

[Tu2-P31-06]Analysis of crystal defects inside mono-cast Si ingot using PL imaging

*Hidetaka Hirono1, Hitoshi Matsuo2, Hideyoshi Tanabe2, Noritaka Usami1,3,4 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Kyocera corporation (Japan), 3. InFuS, Nagoya university (Japan), 4. IMaSS, Nagoya university (Japan))

[Tu2-P31-07]Exciton Fission Enhanced Silicon Solar Cell

*Kangmin Lee1, Narumi Nagaya1, Collin F. Perkinson1, Aaron Li1, Youri Lee2, Xinjue Zhong3, Sujin Lee3, Leah P. Weisburn1, Tomi K. Baikie1, Moungi G. Bawendi1, Troy Van Voorhis1, William A. Tisdale1, Antoine Kahn3, Kwanyong Seo2, Marc A. Baldo1 (1. Massachusetts Institute of Technology (United States of America), 2. Ulsan National Institute of Science and Technology (Korea), 3. Princeton University (United States of America))

[Tu2-P31-08]A study of laser doping process with p-doped amorphous silicon layer for high-efficiency integrated back contact cell

*Yeongseo Son1, MyeongSeob Sim2, Hoyoung Song2, Youngho Choe3, Yoonmook Kang1, Hae-Seok Lee1, Donghwan Kim2 (1. Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Republic of Korea (Korea), 2. Department of Materials Science and Engineering, Korea University, Republic of Korea (Korea), 3. Institute of Energy Technology, Korea University, Republic of Korea (Korea))

[Tu2-P31-09]Numerical simulation study for analysis of Si nanocrystal / SiOx compound layer by ReaxFF Molecular Dynamics

*Genta Tamura1,2, Naoya Uene2, Kazuhiro Gotoh3,4,5, Noritaka Usami5, Takashi Tokumasu2 (1. Graduate School of Eng., Tohoku University (Japan), 2. Inst. of Fluid Science, Tohoku University (Japan), 3. School of Eng., Niigata University (Japan), 4. IRCNT, Niigata University (Japan), 5. Graduate School of Eng., Nagoya University (Japan))

[Tu2-P31-10]Improved passivation of Al-doped zinc oxide passivating contacts for silicon solar cells by engineering the proximity of the first layer of aluminum atoms to the silicon interface

*Piyumi Kodithuwakku1, Daniel Macdonald2, Lachlan Black3 (1. PhD student (Australia), 2. Professor (Australia), 3. Senior Research Fellow (Australia))

[Tu2-P31-11]Improving the passivation performance of doped poly-Si contacts on textured surfaces

*Rabin Basnet1, Wei Wang1, Anitta Rose Varghese1, Stephane Armand1, Heping Shen1, Daniel Macdonald1 (1. The Australian National University (Australia))

[Tu2-P31-12]Suppression of film blistering in silicon nano-crystals/silicon oxide composite layer by insertion of intrinsic hydrogenated amorphous silicon layer

*Kazushi Mizutani1, Kazuhiro Gotoh1,2,3, Tomohisa Tachibana4, Yasuyoshi Kurokawa1,6, Takahiro Ozawa5, Markus Wilde5, Katsuyuki Fukutani5, Noritaka Usami1,6,7 (1. Nagoya University (Japan), 2. Niigata University (Japan), 3. IRCNT, Niigata University (Japan), 4. FREA, AIST (Japan), 5. University of Tokyo (Japan), 6. InFuS, Nagoya University (Japan), 7. IMaSS, Nagoya University (Japan))

[Tu2-P31-13]Electrical properties manipulation of nanocrystalline silicon/silicon oxide composite films

*Kaori Takagi1, Asaki Arata2, Yasuyoshi Kurokawa2,3, Atsushi Masuda1,4, Noritaka Usami2,3,5, Kazuhiro Gotoh1,2,4 (1. Grad. Sch. Sci. Technol., Niigata Univ. (Japan), 2. Grad. Sch. Engr., Nagoya Univ. (Japan), 3. InFuS, Nagoya Univ. (Japan), 4. IRCNT, Niigata Univ. (Japan), 5. IMaSS, Nagoya Univ. (Japan))

[Tu2-P31-14]High-Quality Tunnel Oxide Passivated Contact Fabricated Using Sputtered Amorphous Silicon and Spin-On Doping

*Shasha Li1, Koki Omori1, Yasushi Kawaguchi1, Noboru Yamaguchi1, Shinsuke Miyajima1 (1. Tokyo Institute of Technology (Japan))

[Tu2-P31-15]How Low Can Poly Go: Development of Nanometer-scale Transparent Polysilicon Passivated Contacts

*Kean Chern Fong1, Di Yan2, Stephane Armand1, Peiting Zheng3, Xinyu Zhang3, Jie Yang3, James Bullock2, Daniel MacDonald1 (1. The Australian National University (Australia), 2. University of Melbourne (Australia), 3. Jinko Solar (China))

[Tu2-P31-16]Effect of TiOx layer thickness and LiF interlayer on the passivation
performance of TiOx/Si heterostructure

*Shohei Fukaya1, Kazuhiro Gotoh1,3,4, Hitoshi Sai2, Yasuyoshi Kurokawa1, Noritaka Usami1,5, Takuya Matsui2 (1. Graduate School of Engineering, Nagoya University (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan), 3. Graduate School of Science and Technology, Niigata University (Japan), 4. IRCNT, Niigata University (Japan), 5. InFuS, Nagoya University (Japan))

[Tu2-P31-17]Numerical analysis of TiOx/Si Heterostructure with Molecular
Dynamics Simulation

*Shohei Fukaya1, Yuto Michishita1, Naoya Uene2, Kazuhiro Gotoh1,3,4, Takashi Tokumasu2, Noritaka Usami1,5 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Institute of Fluid Science, Tohoku University (Japan), 3. Graduate School of Science and Technology, Niigata University (Japan), 4. IRCNT, Niigata University (Japan), 5. Institutes of Innovation for Future Society, Nagoya University (Japan))

[Tu2-P31-18]Impact of microstructure of PEDOT:PSS on the performance of Si heterojunction solar cells

*Kengo Yamanaka1, Yasuyoshi Kurokawa2, Tetsuo Soga1, Shinya Kato1 (1. Nagoya Institute of Technology (Japan), 2. Nagoya University (Japan))

[Tu2-P31-19]ALD-TiOx and PVD-MoOx in dopant-free silicon heterojunction solar cells

*Liqi Cao1, Roel Theeuwes2, Yifeng Zhao1, Paul Procel1, Erwin Kessels2, Miro Zeman1, Luana Mazzarella1, Olindo Isabella11 (1. Delft University of Technology (Netherlands), 2. Eindhoven University of Technology (Netherlands))

[Tu2-P31-20]Silicon heterojunction solar cells with double-layer structure (n)nc-SiOX: H.

*Guanlan Chen1, Xuejiao Wang1, Yuxiang Li1, Xiaodan Zhang1, Ying Zhao1 (1. Nankai University (China))

[Tu2-P31-21]Deep Level Transient Spectroscopy Study of Silicon Heterojunction Solar Cells

*Ka-Hyun Kim1, Dohoe Kim1, Yongrae Kim1, Yuntak Han1, Jinyoung Lee1, Seowoo Sim1 (1. Chungbuk National University (Korea))

[Tu2-P31-22]Laser cutting induced damage in heterojunction silicon solar Cells

*Xiang Lv1, Zechen Hu1, Qiyuan He1, Lifei Yang2, Deren Yang1, Xuegong Yv1 (1. State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University (China), 2. SuZhou GH New Energy Tech (China))

[Tu2-P31-23]Investigation of deposition conditions for multilayer passivation thin filmsusing Bayesian optimization with hydrogen concentration as an index

*Soma Kondo1, Yasuyoshi Kurokawa1,2, Kazuhiro Gotoh3,4, Kentaro Kutukake1,5, Noritaka Usami1,2,5 (1. Grad. Sch Eng, Nagoya Univ (Japan), 2. InFuS,Nagoya Univ (Japan), 3. Grad. Sch Sci. Technol,Niigata Univ (Japan), 4. IRCNT,Niigata Univ (Japan), 5. IMass, Nagoya Univ (Japan))

[Tu2-P31-24]Hydrogen diffusion and passivation in a-Si:H/Si heterojunction

*Ryoji Asahi1, Koki Sato1, Takayuki Semba1, Ryosuke Jinnouchi1 (1. Nagoya University (Japan))

[Tu2-P31-25]Investigating the Impact of UV Light During PECVD on Defect Formation and Electrical Performance in Silicon Solar Cells Using C-V Analysis

*SUBHASH CHAND YADAV1, Hyunju Lee 2, Tomohiko Hara3, Yoshio Ohshita1 (1. TOYOTA TECHNOLOGICAL INSTITUTE JAPAN (Japan), 2. Meiji University, Japan (Japan), 3. Ritsumeikan University, Japan (Japan))

[Tu2-P31-26]Preparation of mixed amorphous oxide films for passivation of crystalline silicon surfaces by mist chemical vapor deposition

*Koji Arafune1, Atsushi Nakano1, Takuto Otsuji1, Rikuto Yabubayashi1 (1. University of Hyogo (Japan))

[Tu2-P31-27]Outstanding Surface Passivation of Textured Si Surfaces by Chlorinated Thin Films

*Mohamed M. Shehata1, Daniel H. Macdonald1, Lachlan E. Black1 (1. School of Engineering, The Australian National University, Canberra, ACT 2600, Australia. *mohamed.ismael@anu.edu.au (Australia))

[Tu2-P31-28]Deposition of silicon dioxide thin films on black silicon nanowires by liquid phase deposition process for photovoltaic applications.

*Muhiddin Ahmad Sheriff1,2, Md Roslan Hashim2, Mohd Zamir Pakhuruddin2,3, Mohammed Waziri Zanna1, Adamu Ahmed Goje1 (1. Federal Polytechnic Damaturu, P.M.B. 1006, Yobe state, (Nigeria), 2. School of Physics, Universiti Sains Malaysia, 11800, Minden, Penang, (Malaysia), 3. Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, USM Penang, (Malaysia))

[Tu2-P31-29]Preparation of silicon nanosheets for solar cell applications

*Sota Okochi1, Satoru Miyamoto1, Shinya Kato2, Noritaka Usami1,3,4, Yasuyoshi Kurokawa1 (1. Nagoya University (Japan), 2. Nagoya Institute of Technology (Japan), 3. InFuS Nagoya University (Japan), 4. IMaSS Nagoya University (Japan))

[Tu2-P31-30]Improvement of surface roughness through surface modification and viscosity

*Tomohisa Goto Goto1, Shogo Otsuka1, Masami Kobayashi1, Masaki Nakamura1 (1. USHIO (Japan))

[Tu2-P31-31]Highly controllable metal free sub-micrometre texturing of silicon substrate

*Wei Wang1, Rabin Basnet1, Qian Cui1, Daniel MacDonald1, Klaus Weber1, Heping Shen1 (1. The Australian National University (Australia))

[Tu2-P31-33]Effect of cooling rate temperature on controlling the Ge concentration in SiGe layer formation

*Sarah Saleh Alamri1, Shota Suzuki2, Moeko Matsubara2, Kaito Kitaura1, Taruna Jupalli1, Yuqing Li1, Hideaki Minamiyama2, Takashi Kuroki2, Satoshi Hamaguchi1, Marwan Dhamrin1,2 (1. Graduate School of Engineering, Osaka University. (Japan), 2. Toyo Aluminium K.K, Yao, Osaka. (Japan))

[Tu2-P31-34]Epitaxial growth of SiGe with thick Ge-rich regions on Si(111) substrates by screen-printing and annealing

*Kohei Ito1, Ryoji Katsube1, Yuki Imai2, Satoru Miyamoto1,2, Shota Suzuki3, Hideaki Minamiyama3, Marwan Dhamrin3,4, Noritaka Usami1,2,5 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Institutes of Innovation for Future Society, Nagoya University (Japan), 3. Toyo Aluminium K.K (Japan), 4. Graduate School of Engineering, Osaka University (Japan), 5. Institute of Materials and Systems for Sustainability, Nagoya University (Japan))

[Tu2-P31-35]Effect of Ge contents in the Al-Ge paste on SiGe layer growth characteristics by Al-induced crystallization method

*yuqing Li1, Taruna Teja Jupalli1, Shota Suzuki2, Sarah Alamri1, Moeko Matsubara2, Hideaki Minamiyama2, Marwan Dhamrin1,2 (1. Graduate School of Engineering, Osaka University (Japan), 2. Toyo Aluminium K.K, Yao (Japan))

[Tu2-P31-36]Effect of pre-oxidation parameters on Al-Ge screen printed silicon substrates for improved SiGe layer growth

*Taruna Teja Jupalli1, Shota Suzuki2, Sarah Alamri1, Yuqing Li 1, Kaito Kitaura1, Moeko Matsubara2, Hideaki Minamiyama2, Marwan Dhamrin1,2 (1. Graduate School of Engineering, Osaka University (Japan), 2. Toyo Aluminium K.K (Japan))

[Tu2-P31-37]Silver Recovery from Crystalline Silicon Photovoltaic Solar Cells using Continuous Stirred-Tank Reactors

Shuang Song1, *Yuting Zhuo1 (1. University of New South Wales (Australia))

[Tu2-P31-38]Heat Transfer Calculation in Silicon Solar Module: A Computational Approach

*Myeongji Woo1, MyeongSeob Sim2, Ji Woo Sohn3, Dongjin Choi4, Youngho Choe5, Donghwan Kim6, Hae-Seok Lee7, Yoonmook Kang8 (1. Department of Materials Science and Engineering, Korea University, Republic of Korea (Korea), 2. Department of Materials Science and Engineering, Korea University, Republic of Korea (Korea), 3. Department of Materials Science and Engineering, Korea University, Republic of Korea (Korea), 4. Department of Materials Science and Engineering, Korea University, Republic of Korea (Korea), 5. Institute of Energy Technology, Korea University, Republic of Korea (Korea), 6. Department of Materials Science and Engineering, Korea University, Republic of Korea (Korea), 7. Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Republic of Korea (Korea), 8. Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Republic of Korea (Korea))

[Tu2-P31-39]Moisture ingress evaluation in UV exposed double glass PV modules

*Sergiu Pop1, Mihail Bora2 (1. SCP SYS (United States of America), 2. Lawrence Livermore National Laboratory (United States of America))
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