Presentation Information
[Tu2-P31-33]Effect of cooling rate temperature on controlling the Ge concentration in SiGe layer formation
*Sarah Saleh Alamri1, Shota Suzuki2, Moeko Matsubara2, Kaito Kitaura1, Taruna Jupalli1, Yuqing Li1, Hideaki Minamiyama2, Takashi Kuroki2, Satoshi Hamaguchi1, Marwan Dhamrin1,2 (1. Graduate School of Engineering, Osaka University. (Japan), 2. Toyo Aluminium K.K, Yao, Osaka. (Japan))