Presentation Information
[Tu2-P31-34]Epitaxial growth of SiGe with thick Ge-rich regions on Si(111) substrates by screen-printing and annealing
*Kohei Ito1, Ryoji Katsube1, Yuki Imai2, Satoru Miyamoto1,2, Shota Suzuki3, Hideaki Minamiyama3, Marwan Dhamrin3,4, Noritaka Usami1,2,5 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Institutes of Innovation for Future Society, Nagoya University (Japan), 3. Toyo Aluminium K.K (Japan), 4. Graduate School of Engineering, Osaka University (Japan), 5. Institute of Materials and Systems for Sustainability, Nagoya University (Japan))