[We2f-O43] Sub area 4-3: III-V High-efficiency Devices and Related Technologies

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[We2f-O43-03] Formation of thick germanium-on-nothing structures via inductively coupled plasma reactive ion etching

*Wenbo Fan^1,2, Ryuji Oshima², Yasushi Shoji², Takeyoshi Sugaya², Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1. Saitama University (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan))