[We2f-O43] Sub area 4-3: III-V High-efficiency Devices and Related Technologies | PVSEC-35

Session Details

Sub area 4-3: III-V High-efficiency DevicesArea4: Thin-film Photovoltaics and Modules : Sub area 4-3: III-V High-efficiency Devices

[We2f-O43]Sub area 4-3: III-V High-efficiency Devices and Related Technologies

Wed. Nov 13, 2024 11:00 AM - 12:30 PM JST
Wed. Nov 13, 2024 2:00 AM - 3:30 AM UTC

407(4F)

Session Chair(s): Kentaroh Watanabe (Univ. Tokyo), John Simon (NREL)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[We2f-O43-01]High reliability flexible encapsulation technology and modules for GaInP/GaAs/InGaAs thin film solar cells

*Xiaoxu Wu¹, Junhua Long¹, Qiangjian Sun¹, Shulong Lu¹ (1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[We2f-O43-02]Characterization of spalling-released thin film tandem solar cells

*Naoya Miyashita¹, Yasushi Shoji², Takeyoshi Sugaya², Tomah Sogabe¹, Koichi Yamaguchi¹, Yoshitaka Okada³ (1. The University of Electro-Communications (Japan), 2. National Institute of Advanced Industrial Sciencde an Technology (AIST) (Japan), 3. RCAST, The University of Tokyo (Japan))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[We2f-O43-03]Formation of thick germanium-on-nothing structures via inductively coupled plasma reactive ion etching

*Wenbo Fan^1,2, Ryuji Oshima², Yasushi Shoji², Takeyoshi Sugaya², Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1. Saitama University (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[We2f-O43-04]Over 30% efficient GaInP indoor light photovoltaic cells fabricated via HVPE for internet-of-things

*Yasushi Shoji¹, Ryuji Oshima¹, Kikuo Makita¹, Akinori Ubukata², Shuuichi Koseki², Takeyoshi Sugaya¹ (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 2. Taiyo Nippon Sanso Corporation (Japan))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[We2f-O43-05]Fabrication of GaAs solar cells using large-scale, vertical flow type, single-chamber hydride vapor phase epitaxy

*Ryuji Oshima¹, Yasushi Shoji¹, Yudai Shimizu², Kikuo Makita¹, Akinori Ubukata², Hiroki Tokunaga², Takeyoshi Sugaya¹ (1. National Institute of Advanced Industrial Science and Technology (Japan), 2. Taiyo Nippon Sanso Corporation (Japan))

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[We2f-O43-06]Implementation of GaAsGe ternary alloy in a heterojunction solar cell

Pablo Caño¹, *Miguel Ángel Sevillano-Bendezú², Enrique Navarro², Aitana Cano¹, Iván García¹, Raghavendra Rao Juluri³, Ana M. Sánchez³, Alicia Gonzalo Martín⁴, Yolanda González², José María Ripalda² (1. Instituto de Energía Solar, Universidad Politécnica de Madrid (Spain), 2. Instituto de Micro y Nanotecnología (IMN-CNM, CSIC) (Spain), 3. Department of Physics, University of Warwick (UK), 4. Universidad Carlos III de Madrid (Spain))

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