[Th2-P43] Sub area 4-3: III-V High-efficiency Devices | PVSEC-35

Session Details

Sub area 4-3: III-V High-efficiency DevicesArea4: Thin-film Photovoltaics and Modules : Sub area 4-3: III-V High-efficiency Devices

[Th2-P43]Sub area 4-3: III-V High-efficiency Devices

Thu. Nov 14, 2024 11:00 AM - 12:30 PM JST
Thu. Nov 14, 2024 2:00 AM - 3:30 AM UTC

PS-13/Multipurpose Hall (1F)

[Th2-P43-01]Development of large-area GaAs-based tandem solar cells using Modified smart stack

*Kikuo Makita¹, Hidenori Mizuno¹, Yukiko Kamikawa¹, Ryuji Oshima¹, Yasushi Syoji¹, Shogo Ishizuka¹, Takeyoshi Sugaya¹ (1. Advanced Industrial Science and Technology (AIST) (Japan))

[Th2-P43-02]Enhancing surface roughness and optimizing bonding characteristics with appropriate metallization for high-efficiency III-V/Si tandem solar cells

*Junhan Bae¹, Mengmeng Chu¹, Hasnain Yousuf¹, Muhammad Quddamah Khokhar², Polgampola Chamani Madara², Min-Kyung Shin², Sangheon Park³, Junsin Yi⁴ (1. Sungkyunkwan University (Korea), 2. Sungkyunkwan University (Korea), 3. Sungkyunkwan University (Korea), 4. Sungkyunkwan University (Korea))

[Th2-P43-03]Development of Ultra-thin III-V Photovoltaic Devices for High-Efficiency Transparent Application

*Kentaroh Watanabe¹, Hassanet Sodabanlu¹, Meita Asami¹, Yoshiaki Nakano¹, Masakazu Sugiyama¹ (1. The University of Tokyo (Japan))

[Th2-P43-04]Application-oriented high-efficiency quantum well superlattice thin-film triple-junction solar cells

*Menglu yu Yu^1,2, JunHua Long², ShuLong Lu², QiangJian Sun², ZhiTao Chen^2,1, XiaoXu Wu^2,1 (1. University of Science and Technology of China (China), 2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China))

[Th2-P43-05]Performance analysis of space solar cells under increased irradiance conditions

*Yoshiyuki Murakami¹, Teppei Okumura¹, Tetsuya Nakamura¹, Daisuke Sato², Taishi Sumita¹ (1. Japan Aerospace Exploration Agency (Japan), 2. Nagaoka University of Technology (Japan))

[Th2-P43-06]Development of Si Tandem Solar Cells for Vehicle Integrated Photovoltaics

*Masafumi Yamaguchi¹, Tatsuya Takamoto², Kenichi Okumura³, Takashi Mabuchi³, Kyotaro Nakamura¹, Ryo Ozaki¹, Nobuaki Kojima¹, Yoshio Ohshita¹ (1. Toyota Technological Institute (Japan), 2. Sharp Corporation (Japan), 3. Toyota Motor Coprporation (Japan))

[Th2-P43-07]The Impact of Si/Be Co-doping on the Performance of InGaAs Thermophotovoltaic Cells

*Zhao Huyin^1,2, Li Xuefei², Long Junhua², Lu Shulong² (1. University of Science and Technology of China (China), 2. Suzhou Iinstitute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (China))

[Th2-P43-08]Enhanced reflectivity of InGaAs solar cells using patterned dielectric back contacts for thermophotovoltaic applications

*Masaki Date^1,2, Ryuji Oshima², Yasushi Shoji², Hitoshi Sai², Makoto Shimizu³, Takeyoshi Sugaya², Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1. Saitama University (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan), 3. Graduate School of Engineering, Tohoku University (Japan))

[Th2-P43-09]Is the Availability of III-V Materials a Real Concern?

*Jessica Yajie Jiang¹, Ivan Perez-Wurfl¹, Martin Green¹, Ned Ekins-Daukes¹ (1. UNSW (Australia))

[Th2-P43-10]Comprehensive study of optoelectronic reciprocity relation and diode ideality factor under light irradiation through EL and PL measurements

*Meita Asami¹, Kentaroh Watanabe¹, Yoshiaki Nakano², Masakazu Sugiyama¹ (1. RCAST, The University of Tokyo (Japan), 2. School of Engineering, The University of Tokyo (Japan))

[Th2-P43-11]Blueshift of the photoluminescence peak energy as a function of excitation power in an InGaAs/GaAsP wire-on-well quantum structure

*Kaiya Nakajima¹, Nana Taketa¹, Meita Asami², Masakazu Sugiyama², Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1. University of Miyazaki (Japan), 2. Research Center for Advanced Science and Technology, The University of Tokyo (Japan))

[Th2-P43-12]Analyses of Luminescence Coupling in ELO thin-film tandem solar cells

*Sota Itsubo¹, Dairoku Inaba¹, Naoya Miyashita¹, Koichi Yamaguchi¹ (1. University of Electro-Communications (Japan))

[Th2-P43-13]Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy

*Hayato Koto¹, Masahiro Kawano¹, Hidetoshi Suzuki¹ (1. University of Miyazaki (Japan))

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