SISPAD2026

SISPAD2026

Advanced Search

Session Details

OralSession 9: CMOS

[Session 9]Session 9: Advanced CMOS Devices

Wed. Sep 30, 2026 9:00 AM - 11:30 AM JST
Wed. Sep 30, 2026 12:00 AM - 2:30 AM UTC

Room A1(3rd floor)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[Session_9-01]Efficient DC Simulation of Monolithic CFETs: A Quasi-1D Approach with Region-Wise Analysis

*Sung-Min Hong¹ (1. Gwangju Institute of Science and Technology)

9:30 AM - 9:50 AM JST(12:30 AM - 12:50 AM UTC)

[Session_9-02]Impact of 4F2 DRAM Access Transistor Design on Floating Body Effect and Retention

*Ashish Pal¹, Lars P. Tatum¹, Rohit Gupta¹, El Mehdi Bazizi¹, Subi Kengeri¹ (1. Applied Materials)

9:50 AM - 10:10 AM JST(12:50 AM - 1:10 AM UTC)

[Session_9-03]Multiscale Modeling of Channel Surface Roughness: Impact on Front-End-of-Line And Circuit Performance for Advanced Logic Technology

*Ning Yang¹, Pratik B. Vyas¹, Rohit Gupta¹, Ashish Pal¹, El Mehdi Bazizi¹, Subi Kengeri¹ (1. Applied Materials Inc.)

10:10 AM - 10:30 AM JST(1:10 AM - 1:30 AM UTC)

Break

10:30 AM - 10:50 AM JST(1:30 AM - 1:50 AM UTC)

[Session_9-04]Impact of Thermal Expansion Mismatch-Induced NMOS Metal Gate Stress on MBCFET Performance

*Sung-Ho Kim¹, Sooyoung Park¹, Chang Ju Moon¹, Jong Su Kim¹, Jaehong Lee¹, Yoon-Suk Kim¹, Seung Hyun Song¹, Yonghee Park¹, Jaehoon Jeong¹ (1. Samsung Electronics Corp., Ltd.)

10:50 AM - 11:10 AM JST(1:50 AM - 2:10 AM UTC)

[Session_9-05]Modeling of Soft Errors in CFET SRAM Using Machine Learning-Assisted Circuit Simulation

*Vanness Filbert Cierra¹, Yoshinari Kamakura¹ (1. Osaka Inst. Tech.)

11:10 AM - 11:30 AM JST(2:10 AM - 2:30 AM UTC)

[Session_9-06]Low-Temperature Behavior in Silicon Nanowire n-FETs Studied by Atomistic NEGF

*Sanam Moslemi-Tabrizi², Peter Schvan², Philippe Blaise¹, Udita Kapoor¹, Daniel Lemus³, Tillmann Kubis³ (1. Silvaco Inc., 2. Ciena Inc., 3. Purdue Univ.)

Back to Category List