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Session 8: Advanced CMOS DevicesSession 8: Advanced CMOS Devices

[8]Advanced CMOS Devices

Mon. Jun 9, 2025 10:45 AM - 12:25 PM JST
Mon. Jun 9, 2025 1:45 AM - 3:25 AM UTC
Suzaku III(Suzaku III)
Chair:Hiroaki Satoh(Shizuoka University), Woo Young Choi(Seoul National University)
10:45 AM - 11:05 AM JST(1:45 AM - 2:05 AM UTC)

[8-01]Heterojunction Tunneling and Reverse Shockley–Read–Hall Recombination Effects in Si1-xGex Channel/Si SDE CFETs for Steeper Subthreshold Swing and Low DIBL

*Pei-lung Chang1, Ying-tsan Ethan Tang1 (1. Univ. of Natiomal Central University (Taiwan))
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11:05 AM - 11:25 AM JST(2:05 AM - 2:25 AM UTC)

[8-02]Statistical Analysis of Subthreshold Current Distributions in bulk MOSFETs at Room and Cryogenic Temperatures

*Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Hiroshi Oka2, Takahiro Mori2, Masaharu Kobayashi1, Toshiro Hiramoto1 (1. Univ. of Tokyo (Japan), 2. AIST (Japan))
Comment()
11:25 AM - 11:45 AM JST(2:25 AM - 2:45 AM UTC)

[8-03]Investigation on Enhanced Hot Carrier Degradation in FinFETs at Cryogenic Temperature

*Zirui Wang1, Zuoyuan Dong1,2, Hongbo Wang1, Zixuan Sun1, Yue-Yang Liu3, Xing Wu2, Runsheng Wang1 (1. Peking Univ. (China), 2. East China Normal Univ. (China), 3. Inst. of Semiconductors (China))
Comment()
11:45 AM - 12:05 PM JST(2:45 AM - 3:05 AM UTC)

[8-04]Study of Current Inflections in Reverse Bias in Nano-dimensional Silicon Esaki Diodes

*Daris Alfafa1,2, Arief Udhiarto2, Daniel Moraru1,3 (1. Graduate School of Sci. and Tech., Shizuoka Univ. (Japan), 2. Department of Electrical Eng., Univ. of Indonesia (Indonesia), 3. Res. Inst. of Electronics, Shizuoka Univ. (Japan))
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12:05 PM - 12:25 PM JST(3:05 AM - 3:25 AM UTC)

[8-05]Deep Learning to Automate Fitting and Parameter Extraction of 2D Transistors

*Robert K. A. Bennett1, Harmon F. Gault1, Asir Intisar Khan1, Lauren Hoang1, Tara Peña1, Kathryn Neilson1, Young Suh Song1, Zhepeng Zhang2, Andrew J. Mannix2, Eric Pop1,2,3 (1. Stanford Univ., Dept. of Electrical Eng. (United States of America), 2. Stanford Univ., Dept. of Materials Sci. & Eng. (United States of America), 3. Stanford Univ., Dept. of Appl. Phys. (United States of America))
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