[C-10] Electron Devices

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[C-10-07] 極薄 Si 層のゼーベック係数に与える表面ラフネスの効果

〇Hiroya Ikeda¹, Yudai Yoshimori¹, Yukino Nunome¹, Khotimatul Fauziah², Faiz Salleh³, Hiromu Hamasaki¹ (1. Shizuoka Univ., 2. BRIN, 3. Univ. Malaya)

Keywords:

thermoelectric,silicon,surface roughness,Seebeck coefficient,nanostructure