IEICE Society Conference 2025
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Session Details

一般セッションC. Electronics Society : C-10．Electron Devices

[C-10]Electron Devices

Wed. Sep 10, 2025 10:00 AM - 12:15 PM JST
Wed. Sep 10, 2025 1:00 AM - 3:15 AM UTC
School of Engineering Building No.1 3F Lecture Room No.7(Okayama University)
Chair:MASATOSHI KOYAMA(Osaka Institute of Technology), Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.)
10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[C-10-01](Invited Presentation 30min.) Ultra-Broadband Analog Multiplexer in InP HBT Technology for Optical Communications

〇Munehiko Nagatani1, Hitoshi Wakita1, Yuta Shiratori1 (1. NTT, Inc.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[C-10-02]Influence of wafer-level packaging on the heat dissipation and characteristics of InP-HBTs

〇Yusuke Araki1, Yuta Shiratori1, Fumito Nakajima1 (1. NTT Inc.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[C-10-03]順方向バイアスダイオードを用いた広周波数範囲・高出力Colpitts-Clapp VCO

〇Satoshi Kawahara1, Tsutomu Takeya1, Teruo Jyo1, Hitoshi Wakita1, Munehiko Nagatani1, Miwa Mutoh1, Yuta Shiratori1, Hiroyuki Takahashi1 (1. Device Technology Labs., NTT, Inc.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[C-10-04]アナログ電子アメーバ大規模化のための仮足ユニット設計

〇Shu Nagasawa1, Seiya Kasai1 (1. Hokkaido Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

Break time

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[C-10-05]Colorization of Curved CMOS Image Sensors Using SOI Structure

〇Masahide Goto1, Shigeyuki Imura1, Hiroto Sato1 (1. NHK)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Candidate for Academic Incentive Award

[C-10-06]Potential of a Unified Space-Ground Environment Model for Semiconductor Soft-Error

◎Ryoya Sando1, Daisuke Kobayashi1,2 (1. EEIS/UTokyo, 2. ISAS/JAXA)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[C-10-07]極薄 Si 層のゼーベック係数に与える表面ラフネスの効果

〇Hiroya Ikeda1, Yudai Yoshimori1, Yukino Nunome1, Khotimatul Fauziah2, Faiz Salleh3, Hiromu Hamasaki1 (1. Shizuoka Univ., 2. BRIN, 3. Univ. Malaya)
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