Presentation Information
[C-3_C-4-31]High-bandwidth operation of III-V membrane/Si MOS type Mach-Zehnder modulators using capacitively-loaded travelling-wave electrodes
〇Hajime Tanaka1, Naotaka Kasuya1,2, Kento Komatsu1, Naoko Inoue1, Takehiko Kikuchi1,3, Takuya Mitarai1,3, Shun Kimura1, Naoki Fujiwara1, Nobuhiko Nishiyama3, Mitsuru Takenaka2, Hideki Yagi1 (1. Sumitomo Electric Industries, Ltd., 2. The University of Tokyo, 3. Science Tokyo)
Keywords:
Modulator,III-V,MOS type,Silicon
