IEICE Society Conference 2026
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Session Details

一般セッションC. Electronics Society : C-3/C-4．Optoelectronics / Lasers and Quantum Electronics

[C-3_C-4]Optoelectronics / Lasers and Quantum Electronics

Fri. Sep 25, 2026 8:45 AM - 12:00 PM JST
Fri. Sep 25, 2026 11:45 PM - 3:00 AM UTC
M-Bldg M151(Hokkaido University)
Chair:HIROKAZU KOBAYASHI, Keisuke Kondo
8:45 AM - 9:15 AM JST(11:45 PM - 12:15 AM UTC)

[C-3_C-4-29]シリコン/ポリマーハイブリッド光変調器の進展と短距離光通信への展開

〇Hiromu Sato1, Shiyoshi Yokoyama1 (1. IMCE, Kyushu Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[C-3_C-4-30]深層学習を用いた高消光比多モード干渉計型光変調器の設計

〇Takumi Urabe1, Rikuto Nagaya1, Taro Arakawa1 (1. Yokohama National Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[C-3_C-4-31]High-bandwidth operation of III-V membrane/Si MOS type Mach-Zehnder modulators using capacitively-loaded travelling-wave electrodes

〇Hajime Tanaka1, Naotaka Kasuya1,2, Kento Komatsu1, Naoko Inoue1, Takehiko Kikuchi1,3, Takuya Mitarai1,3, Shun Kimura1, Naoki Fujiwara1, Nobuhiko Nishiyama3, Mitsuru Takenaka2, Hideki Yagi1 (1. Sumitomo Electric Industries, Ltd., 2. The University of Tokyo, 3. Science Tokyo)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[C-3_C-4-32]Design of Submillimeter-Scale a-Si-Loaded Slow-Light TFLN Optical Modulator

〇Keisuke Kawahara1, Kazuya Miura1, Tsuyoshi Horikawa1, Moataz Eissa1, Yoshitaka Oiso1, Ryuga Yajima2, Yoshiki Katagiri2, Nobuhiko Nishiyama1,3 (1. Institute of Science Tokyo, 2. NGK Insulators, LTD, 3. Next-generation Semiconductor Eco-system Co-creation Center)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Candidate for Academic Incentive Award

[C-3_C-4-33]300-Gbps Transmission Analysis of a-Si-Loaded TFLN Optical Modulator on Quartz Substrate Based on Electrode Measurements

◎Kazuya Miura1, Keisuke Kawahara1, Tsuyoshi Horikawa1, Moataz Eissa1, Yoshitaka Oiso1, Ryuga Yajima2, Yoshiki Yajima2, Nobuhiko Nishiyama1,3 (1. Department of Electrical and Electronic Engineering, Institute of Science Tokyo, 2. NGK Insulators, LTD, 3. Next generation semiconductor eco-system co-creation center)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

Break time

10:30 AM - 11:00 AM JST(1:30 AM - 2:00 AM UTC)

[C-3_C-4-34]高速・差動駆動に向けたSi上メンブレンInP系EA変調器

〇Masaki Wakaba1, Masahiko Shiraishi1, Kouji Mizufune1, Yuya Furusho1, Munenori Hirata1, Mogi Takashi1, Tatsuya Kimoto1, Kensho Nishizaki1, Yusaku Takai1, Sho Yoneyama1, Kazuya Nagashima1, Hideyuki Nasu1, Masaki Kotoku1, Tatsurou Hiraki2,3, Takuro Fujii2,3, Takuma Aihara2,3, Tomonari Sato2,3, Shinji Matsuo2,3 (1. FURUKAWA ELECTRIC CO., LTD, 2. Device Technology Labs, NTT, Inc., 3. Device Innovation Center, NTT, Inc.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[C-3_C-4-35]QWI-MQW導波路を用いた5µm長メンブレンDRレーザの室温連続発振

〇Eirna Kanno1, Takuro Fujii1, Koji Takeda, Shinji Matsuo1 (1. NTT)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Candidate for Academic Incentive Award

[C-3_C-4-36]InP/Si tunable lasers integrating SOAs with different structure using chip-on-wafer bonding

◎Hidenari Fujikata1, Takuo Hiratani1, Kento Komatsu1, Naoko Inoue1, Naoki Fujiwara1, Takehiko Kikuchi1,2, Takuya Mitarai1,2, Shun Kimura1, Tsukuru Katsuyama2, Nobuhiko Nishiyama2, Hideki Yagi1 (1. Sumitomo Electric Industries, 2. Institute of Science Tokyo)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[C-3_C-4-37]1550nm帯QD-SOAにおける四光波混合の生成効率評価

〇Sayaka Tanaka1,2, Naoya Chiyo1,2, Atsushi Matsumoto2, Shinya Nakajima2, Toshimasa Umezawa2, Kouichi Akahane2, Satoshi Shinada2, Tomohiro Maeda1,2, Hideyuki Sotobayashi1 (1. Aoyama Gakuin University, 2. National Institute of Information and Communications Technology)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[C-3_C-4-38]Investigation of High-Power Operation and Improved Power Conversion Efficiency of Dual-Port Raman Pumps

〇Junji Yoshida1, Yasuto Tatamida1, Shun Kamada1, Tatsuya Muro1, Masayoshi Seki2, Naoya Hojo2, Yusuke Isozaki2 (1. FURUKAWA ELECTRIC, 2. FFOD)
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