[C-3_C-4] Optoelectronics / Lasers and Quantum Electronics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Candidate for Academic Incentive Award

[C-3_C-4-33] 300-Gbps Transmission Analysis of a-Si-Loaded TFLN Optical Modulator on Quartz Substrate Based on Electrode Measurements

◎Kazuya Miura¹, Keisuke Kawahara¹, Tsuyoshi Horikawa¹, Moataz Eissa¹, Yoshitaka Oiso¹, Ryuga Yajima², Yoshiki Yajima², Nobuhiko Nishiyama^1,3 (1. Department of Electrical and Electronic Engineering, Institute of Science Tokyo, 2. NGK Insulators, LTD, 3. Next generation semiconductor eco-system co-creation center)

Keywords:

Optical Modulator,Thin-film Lithium Niobate (TFLN),Slow-wave Electrode,Quartz Substrate,Equivalent Circuit Model

Thin-film lithium niobate (TFLN) optical modulators are anticipated as next-generation devices for multi-Tb/s class optical interconnections. However, conventional LN modulators suffer from a high VπL, resulting in centimeter-scale phase shifter lengths, and microfabrication of LN via etching remains difficult. To address this, we have realized an LN etching-free waveguide with high lateral optical confinement using an a-Si loaded structure. Furthermore, in our previous report, we designed a comb-shaped slow-wave electrode structure that simultaneously achieves velocity matching with the guided light at a relatively high group index (ng = 3.0) and impedance matching. In this work, we fabricated and characterized the designed slow-wave electrodes and analyzed the high-frequency characteristics of the modulator by constructing an equivalent circuit model. As a result, we revealed that operation at up to 300 Gbps is expected for short devices on the order of 1–2 mm in length.