[C-3_C-4] Optoelectronics / Lasers and Quantum Electronics

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Candidate for Academic Incentive Award

[C-3_C-4-36] InP/Si tunable lasers integrating SOAs with different structure using chip-on-wafer bonding

◎Hidenari Fujikata¹, Takuo Hiratani¹, Kento Komatsu¹, Naoko Inoue¹, Naoki Fujiwara¹, Takehiko Kikuchi^1,2, Takuya Mitarai^1,2, Shun Kimura¹, Tsukuru Katsuyama², Nobuhiko Nishiyama², Hideki Yagi¹ (1. Sumitomo Electric Industries, 2. Institute of Science Tokyo)

Keywords:

heterogeneous integration,Si photonics,tunable laser,SOA

To achieve both a transmission rate of 10 Tb/s class and a low power consumption, multi-channel integration of various active devices is one of promising approaches. To realize the goal, it is necessary to integrate several SOAs for the compensation of large insertion loss which occurs in multi-channel modulators. Until now, we developed a chip-on-wafer bonding process which allows integration of Ⅲ-Ⅴ chips with different epitaxial layer designs to appropriate position on the Si-photonics platform. In this work, as the demonstration for the monolithic integration of several SOAs, we report on InP/Si tunable lasers integrating dual SOA with different epitaxial layer design using the chip-on-wafer bonding process.