[TP]Surface Elastic Waves Characteristics and Interaction with Electrons and Lights
N. Mikoshiba(1.Electrotechnical Laboratory)
1971 Conference on Solid State Devices
Sep 1 - Sep 2, 1971The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
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1971 Conference on Solid State Devices
Sep 1 - Sep 2, 1971The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(39)
[S-1]Bulk Effect Device (I)
N. Mizushima, S. Mitsui(1.Nippon Telegraph and Telephone Public Corporation, 2.Mitsubishi Electric Corporation)
[1-1]Acousto-Optic Modulation with Coupled Gunn Oscillator-Piezoelectric Structure
A. Ishida, M. Sumi(1.Nippon Telegraph and Telephone Public Corporation)
[1-2]Amplification of Acoustic Surface Waves under Transverse Magnetic Field in Coupled Intrinsic Semiconductor-Piezodielectric Systems
M. Yamanishi, M. Ono, T. Miyauchi, K. Yoshida(1.University of Osaka Prefecture, 2.Okayama University)
[1-3]Control of Domain Shape in CdS Crystal and its Application
S. Furukawa, T. Hata(1.Tokyo Institute of Technology)
[1-4]Effects of Magnetic Field on Electron Transfer and Transport Properties in Gallium Arsenide
A. Sasaki, T. Tanaka(1.Kyoto University)
[S-2]Bulk Effect Device (II)
M. Uenohara, R. Nii(1.Nippon Electric Co., Ltd., 2.Nippon Telegraph and Telephone Public Corporation)
[2-1]The Oscillation Characteristics on an Avalanche Diode
K. Nawata, M. Ikeda(1.Nippon Telegraph and Telephone Public Corporation)
[2-2]Plasma Coupled Semiconductor Devices
T. Suzuki, Y. Mizushima(1.Nippon Telegraph and Telephone Public Corporation)
[S-3]Amorphous Memory
M. Kikuchi, S. Tanaka, K. Tanaka, E. Maruyama(1.Electrotechnical Laboratory, 2.University of Tokyo, 3.Hitachi Ltd.)
[3-1]Amorphous Semiconductors for Optical Memory and Other Devices
T. Igo, Y. Toyoshima(1.Nippon Telegraph and Telephone Public Corporation)
[3-2]Reversible Amorphous Optical Memory
M. Terao, H. Yamamoto, S. Asai, E. Maruyama(1.Hitachi Ltd.)
[3-3]Some Properties of Metal Photo-doped Chalcogenide Glasses
H. Sakuma, I. Shimizu, H. Kokado, E. Inoue(1.Tokyo Institute of Technology)
[3-4]A New Type of Switching and Memory Effect by Controlling Polarized Field in Semiconductor Interface
Y. Hamakawa, M. Yoshida, K. Yamanaka(1.Osaka University)
[S-4]Photoelectric Device
M. Aoki, K. Maeda, T. Oku, Y. Nannichi(1.University of Tokyo, 2.Tokyo Shibaura Electric Co., Ltd., 3.Mitsubishi Electric Corporation, 4.Nippon Electric Co., Ltd.)
[4-1]Nonlinear PME Effect and High Frequency Signal Generation in Bi
T. Fukase, T. Nakanomyo, Y. Nishina(1.Tohoku University)
[4-2]Self-Induced Pulsations in the Light Output from Double Heterostructure Injection Lasers
T. Ohmi, T. Suzuki, M. Nishimaki(1.Tokyo Institute of Technology)
[4-3]GaAsxSb1-x:Si Light Emitting Diode
T. Mitsuhata(1.Nippon Electric Co., Ltd.)
[4-4]Efficient CdTe EL Diodes Grown by Liquid-Phase Epitaxy
H. Ishida, K. Tanaka(1.Chiba University)
[4-5]Solid State Frequency Indicator
J. Nishizawa, T. Nonaka(1.Tohoku University)
[S-5]MOS Device
Y. Tarui, T. Sugano, S. Kawaji, N. Kawamura(1.Electrotechnical Laboratory, 2.University of Tokyo, 3.Gakushuin University, 4.Nippon Electric Co., Ltd.)
[5-1]Differential Negative Resistance (DNR) in n-Channel MOSFET's of Si
Y. Murayama, Y. Katayama, N. Kotera, Y. Kamigaki, I. Yoshida, K. F. Komatsubara(1.Hitachi Ltd.)
[5-2]Anisotropic Channel Conductivity of MOSFETs on the (110) Surface of Silicon
H. Sakaki, T. Sugano(1.University of Tokyo)
[5-3]Technology and Performance of N-channel MOS-LSI Using Depletion-Type Load Elements
N. Hashimoto, M. Nagata, T. Masuhara(1.Hitachi Ltd.)
[5-4]The Proposal of Electrically Reprogramable Non-Volatile Semiconductor Memory
Y. Tarui, Y. Hayashi, K. Nagai(1.Electrotechnical Laboratory)
[5-5]Avalanche-Injection MOS Read-Only-Memory
H. Hara, K. Ohuchi, T. Sato, H. Tango, Y. Yasuda, Y. Ohmori, M. Yamanaka, Y. Takeishi(1.Tokyo Shibaura Electric Co., Ltd.)
[5-6]Electron Mobility in an MOS Inversion Layer
Y. C. Cheng(1.Bell-Northern Research)
[S-6]Other Devices
Y. Hamakawa, T. Tokuyama, M. Umeno, K. Takahashi(1.Osaka University, 2.Hitachi Ltd., 3.Nagoya University, 4.Tokyo Institute of Technology)
[6-1]A New Magnetocapacitance Effect in Metal-Ferromagnetic Semiconductor Junctions
M. Toda(1.RCA Research Laboratories, Inc.)
[6-2]A New Type of Stress Sensitive Device
Y. Miyai, N. Tsuda, H. Kawamura(1.Matsushita Electronics Corporation, 2.Osaka University)
[6-3]Plasma Spread in High-Frequency Thyristors
Y. Terasawa(1.Hitachi, Ltd.)
[6-4]Memory Effect in CdSe Diodes
T. Nakau, M. Okuda, H. Nimura, H. Takenoshita(1.University of Osaka Prefecture)
[S-7]Device Technology
S. Namba, M. Yasufuku, I. Akasaki, T. Abe(1.Osaka University, 2.Fujitsu Co., Ltd., 3.Matsushita Electric Industrial Co., Ltd., 4.Tokyo Shibaura Electric Co., Ltd.)
[7-1]Application of Radiation Enhanced Diffusion to Microwave Transistor Fabracations and Its Design Optimization
S. Yamamoto, T. Sakamoto, Y. Zohta, K. Mimura(1.Tokyo Shibaura Electric Co., Ltd.)
[7-2]Formation of Donor Center in Silicon by Hot Proton Irradiation
M. Konaka, T. Abe, Y. Nishi, H. Ohtsubo, Y. Ohmura, M. Kanazawa(1.Tokyo Shibaura Electric Co., Ltd.)
[7-3]Reverse Annealing Behavior of Boron- and Phosphorus-Implanted Silicon
N. Yoshihiro, T. Ikeda, M. Tamura, T. Tsuchimoto, T. Tokuyama(1.Hitachi Ltd.)
[7-4]Solid-to-Solid Diffusion of Sulfur into GaAs from Ga2S3 Source.
S. Asai, H. Kodera(1.Hitachi Ltd.)
[7-5]Masking Effect of Aluminium Oxide Layer against Diffusion of Zinc into Gallium Arsenide
K. Saito, E. Adachi, N. Sakurai(1.Hitachi Ltd., 2.Tokyo Atomic Industrial Research Laboratory, Ltd.)
[ES]Solid State Devices for New Memory Technology
H. Nishino(1.Electrotechnical Laboratory)
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