Arcrea HIMEJI, Grand Hall
Room A (407)(4th Floor)
Room B (408)(4th Floor)
Room C (409)(4th Floor)
Room D (Medium Hall)(2nd Floor)
Room E (401)(4th Floor)
Room F (402)(4th Floor)
Room H (Small Hall)(2nd Floor)
Room J (Main Studio)(1st Floor)
Room K (404)(4th Floor)
Room M (Special Conference Room)(4th Floor)
Room N (Studio 1)(1st Floor)
JSTUTC
9:00 AMSep 2, 2024 12:00 AM
10:00 AM1:00 AM
11:00 AM2:00 AM
12:00 PM3:00 AM
1:00 PM4:00 AM
2:00 PM5:00 AM
3:00 PM6:00 AM
4:00 PM7:00 AM
5:00 PM8:00 AM
(9:00 AM - 12:50 PM JST)
[PL]

Opening, Award Ceremony and Plenary Session

Session Chair: Meishoku Masahara (Chair, Program Committee), Nobuhiko Nishiyama (Chair, Steering Committee)
Opening, Award Ceremony and Plenary Sessions
01: Advanced CMOS: Material Science / Process Engineering / Device Technology(2:30 PM - 4:00 PM JST)
[A-1]

Advanced CMOS: Process Technology

Session Chair: Genji Nakamura (Tokyo Electron Ltd.), Takashi Matsukawa (AIST)
Oral Presentation
01: Advanced CMOS: Material Science / Process Engineering / Device Technology(4:15 PM - 5:30 PM JST)
[A-2]

Innovative devices and Sensing technology

Session Chair: Hidetoshi Oishi (Sony Semiconductor Solutions Corp.), Shoichi Kabuyanagi (KIOXIA Corp.)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(2:30 PM - 3:45 PM JST)
[B-1]

Ferroelectric Memory Materials

Session Chair: Halid Mulaosmanovic (GlobalFoundries), Atsushi Himeno (Panasonic Holdings Corp.)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(4:15 PM - 5:30 PM JST)
[B-2]

In-Memory and Unconventional Computing I

Session Chair: Ming-Hsiu Lee (Macronix International Co., Ltd.), Xu Bai (NanoBridge Semiconductor, Inc.)
Oral Presentation
03: Heterogeneous and 3D Integration / Interconnect / MEMS(2:30 PM - 3:45 PM JST)
[C-1]

Advanced Metallization I

Session Chair: Wei Feng  (AIST), Takashi Matsumoto (Tokyo Electron Technology Solutions Ltd.)
Oral Presentation
03: Heterogeneous and 3D Integration / Interconnect / MEMS(4:15 PM - 4:45 PM JST)
[C-2]

MEMS and Advanced Metallization I

Session Chair: Takeyasu Saito (Osaka Metropolitan Univ.), Christian Dussarrat (Air Liquide)
Oral Presentation
04: Power / High‐speed Devices and Materials(2:30 PM - 4:00 PM JST)
[D-1]

Ga2O3 Power Devices

Session Chair: Kohei Sasaki (Novel Crystal Technology, Inc.), Masashi Kato (Nagoya Inst. of Technology)
Oral Presentation
04: Power / High‐speed Devices and Materials(4:30 PM - 5:30 PM JST)
[D-2]

Diamond Devices

Session Chair: Norio Tokuda (Kanazawa Univ.), Masashi Kato (Nagoya Inst. of Technology)
Oral Presentation
05: Photonics: Devices / Integration / Related Technology(4:15 PM - 5:30 PM JST)
[E-2]

Integrated Light Source and Related Technology

Session Chair: Mizuki Shirao (Mitsubishi Electric), Karim Hassan (CEA-LETI)
Oral Presentation
06: Energy Harvesting and Converting Devices and Materials(2:30 PM - 3:45 PM JST)
[F-1]

Thermoelectric materials and devices I

Session Chair: Masahiro Nomura (The Univ. of Tokyo), Yoshitaro Nose (Kyoto Univ.)
Oral Presentation
06: Energy Harvesting and Converting Devices and Materials(4:15 PM - 5:30 PM JST)
[F-2]

Thermoelectric materials and devices II

Session Chair: Shinnya Kato (Nagoya Inst. of Technology), Takuya Hoshii (Tokyo Tech)
Oral Presentation
08: Low Dimensional Devices and Materials(2:30 PM - 3:30 PM JST)
[H-1]

Device-I

Session Chair: Masafumi Jo (RIKEN), Mahito Yamamoto (Kansai Univ.)
Oral Presentation
08: Low Dimensional Devices and Materials(4:15 PM - 5:30 PM JST)
[H-2]

Characterization-I

Session Chair: Takuo Sasaki (QST), Yusuke Hoshi (Tokyo City Univ.)
Oral Presentation
09: Novel Functional / Quantum / Spintronic Devices and Materials(2:30 PM - 3:30 PM JST)
[J-1]

Qubit I

Session Chair: Jun Yoneda (Tokyo Tech), Tomohiro Otsuka (Tohoku University)
Oral Presentation
09: Novel Functional / Quantum / Spintronic Devices and Materials(4:15 PM - 5:15 PM JST)
[J-2]

Qubit II

Session Chair: Takafumi Fujita (Osaka Univ.), Tokuro Hata (Tokyo Tech)
Oral Presentation
10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process(2:15 PM - 4:00 PM JST)
[K-1]

Oxide-TFTs I

Session Chair: Mamoru Furuta (Kochi Univ. of Technology), Juan Paolo Bermundo (NAIST)
Oral Presentation
10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process(4:15 PM - 5:30 PM JST)
[K-2]

Oxide-TFTs II

Session Chair: Jun Koyama (Semiconductor Energy Lab.), Wenchang Yeh (Shimane Univ.)
Oral Presentation
11: Advanced Materials: Synthesis / Crystal Growth / Characterization(2:30 PM - 4:00 PM JST)
[M-1]

Oxide Materials

Session Chair: Takuya Hoshi (NTT Device Technology Lab.), Wen-Wei Wu (NYCU)
Oral Presentation
11: Advanced Materials: Synthesis / Crystal Growth / Characterization(4:15 PM - 5:30 PM JST)
[M-2]

Characterization and Device Applications

Session Chair: Yoriko Tominaga (Hiroshima Univ.), Shingo Ogawa (Toray Research Center, Inc.)
Oral Presentation
12: Advanced Circuits / Systems Interacting with Innovative Devices and Materials(2:30 PM - 3:45 PM JST)
[N-1]

Sensor Circuits and Systems

Session Chair: Keita Yasutomi (Shizuoka Univ.), Wataru Saito (Renesas Electronics Corp.)
Oral Presentation