(9:00 AM - 12:00 PM JST)
[PL]
Opening, Award Ceremony and Plenary Session
Opening, Award Ceremony and Plenary Sessions
01: Advanced CMOS: Material Science / Process Engineering / Device Technology(1:30 PM - 3:15 PM JST)
[A-1]
CFET Technology
Session Chair: Takashi Matsukawa (AIST), Kuniyuki Kakushima (Science Tokyo)
Oral Presentation
01: Advanced CMOS: Material Science / Process Engineering / Device Technology(3:30 PM - 5:00 PM JST)
[A-2]
Threshold Voltage Control
Session Chair: Keisuke Yamamoto (Kumamoto Univ.), Genji Nakamura (Tokyo Electron Ltd.)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(1:30 PM - 3:00 PM JST)
[B-1]
3D NAND Flash Memory
Session Chair: Yoshihiro Sato (Tohoku Univ.), Toshinori Numata (Toyota Technological Inst.)
Oral Presentation
02: Advanced and Emerging Memories / New Applications(3:30 PM - 5:00 PM JST)
[B-2]
In-Memory and Unconventional Computing 1
Session Chair: Ken Takeuchi (The Univ. of Tokyo), Xu Bai (NanoBridge Semiconductor, Inc.)
Oral Presentation
12: Advanced and Innovative Circuits / Systems Interacting with Devices and Materials(1:30 PM - 3:00 PM JST)
[C-1]
Power and Sensing Circuits
Session Chair: Kousuke Miyaji (Shinshu Univ.), Hao Qiu (Nanjing Univ.)
Oral Presentation
12: Advanced and Innovative Circuits / Systems Interacting with Devices and Materials(3:30 PM - 4:45 PM JST)
[C-2]
Device Circuit Co-Design
Session Chair: Yasuhiro Ogasahara (AIST), Mahfuzul Islam (Science Tokyo)
Oral Presentation
09: Novel Functional / Quantum / Spintronic Devices and Materials(1:30 PM - 3:15 PM JST)
[D-1]
Spintronics/Quantum Materials/Reservoir Computing
Session Chair: Shinobu Ohya (The Univ. of Tokyo), Kenichi Aoshima (NHK STRL)
Oral Presentation
06: Energy Harvesting and Converting Devices and Materials(1:30 PM - 3:00 PM JST)
[E-1]
Photovoltaics
Session Chair: Kentaro Watanabe (The Univ. of Tokyo), Naoyuki Shibayama (Toin Univ. of Yokohama)
Oral Presentation
06: Energy Harvesting and Converting Devices and Materials(3:30 PM - 4:45 PM JST)
[E-2]
Thermoelectric Devices and Materials
Session Chair: Masahiro Nomura (The Univ. of Tokyo), Takuya Hoshii (Science Tokyo)
Oral Presentation
07: Organic / Molecular / Bio‐electronics(1:30 PM - 3:00 PM JST)
[F-1]
Organic/Inorganic Hybrid Electronics
Session Chair: Toshinori Matsushima (Kyushu Univ.), Hiroaki Iino (Science Tokyo)
Oral Presentation
07: Organic / Molecular / Bio‐electronics(3:30 PM - 5:00 PM JST)
[F-2]
Organic Electronics
Session Chair: Masakazu Nakamura (NAIST), Seiya Yokokura (Hokkaido Univ.)
Oral Presentation
05: Photonics: Devices / Integration / Related Technology(1:30 PM - 3:00 PM JST)
[G-1]
Integrated Photonics
Session Chair: Frederic Boeuf (STMicroelectronics), Mizuki Shirao (Mitsubishi Electric)
Oral Presentation
05: Photonics: Devices / Integration / Related Technology(3:30 PM - 5:00 PM JST)
[G-2]
Light Sources
Session Chair: Xuejun Xu (Nippon Telegraph and Telephone Corporation), Mizuki Shirao (Mitsubishi Electric)
Oral Presentation
11: Advanced Materials: Synthesis / Crystal Growth / Characterization(1:30 PM - 3:00 PM JST)
[H-1]
Group IV Materials
Session Chair: Taizoh Sadoh (Kyushu Univ.), Katsunori Makihara (Nagoya Univ.)
Oral Presentation
11: Advanced Materials: Synthesis / Crystal Growth / Characterization(3:30 PM - 4:45 PM JST)
[H-2]
Wide Bandgap and Oxide Materials I
Session Chair: Takuya Hoshi (NTT Device Technology Lab.), Yoriko Tominaga (Hiroshima Univ.)
Oral Presentation
03: Heterogeneous and 3D Integration / Interconnect / MEMS(1:30 PM - 3:00 PM JST)
[J-1]
3D Integration
Session Chair: Takashi Matsumoto (Tokyo Electron Technology Solutions Ltd.), Mayumi B. Takeyama (Kitami Inst. of Tech.)
Oral Presentation
03: Heterogeneous and 3D Integration / Interconnect / MEMS(3:30 PM - 5:00 PM JST)
[J-2]
Advanced Devices
Session Chair: Kenji Shiojima (Univ. of Fukui), T. Nogami (IBM Research)
Oral Presentation
08: Low Dimensional Devices and Materials(1:30 PM - 3:00 PM JST)
[K-1]
Growth
Session Chair: Satoshi Hiura (Hokkaido Univ.), Takayuki Arie (Osaka Metropolitan Univ.)
Oral Presentation
08: Low Dimensional Devices and Materials(3:30 PM - 5:00 PM JST)
[K-2]
Characterization I
Session Chair: Takuo Sasaki (QST), Shinjiro Hara (NIMS)
Oral Presentation
04: Power / High‐speed Devices and Materials(1:30 PM - 3:00 PM JST)
[M-1]
SiC Mateials and Processes
Session Chair: Tomoya Ono (Kobe Univ.), Kohei Adachi (Mitsubishi Electric)
Oral Presentation
04: Power / High‐speed Devices and Materials(3:30 PM - 5:00 PM JST)
[M-2]
THz and High-speed Devices
Session Chair: Taketomo Sato (Hokkaido Univ.), Takuya Tsutsumi (Osaka Metropolitan Univ.)
Oral Presentation
10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process(1:30 PM - 3:00 PM JST)
[N-1]
Oxide Semiconductor Devices 1
Session Chair: Mamoru Furuta (Kochi Univ. of Technology), Jun Koyama (Semiconductor Energy Lab.)
Oral Presentation
10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process(3:30 PM - 5:00 PM JST)
[N-2]
Oxide Semiconductor Devices 2
Session Chair: Wenchang Yeh (Shimane Univ.), Tsung-En Lee (National Yang Ming Chiao Tung Univ.)
Oral Presentation